UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original Rev. 1.0 Sample ready and release Rev. 1.1 1.Add 28-pin 8x20 mm TSOP-I 2.Add 28L 8x20mm TSOP-I outline dimension Rev. 1.2 Add order information for lead free product Date May 4,2001 Jul 16,2001 Jul 16,2002 May 13,2003 ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 FEATURES GENERAL DESCRIPTION Fast access time : 35/70ns (max.) Low power consumption: Operating current : 40/20 mA (max) Standby current : 1 µA (typical) L-version 0.5µA(typical) LL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Three state outputs Data retention voltage : 1.5V (min.) Package : 28-pin 600 mil PDIP 28-pin 330 mil SOP 28-pin 8x13.4mm STSOP 28-pin 8x20 mm TSOP-I The UT62L256C is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The UT62L256C is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT62L256C operates from a single 2.7V ~ 3.6V power supply and all inputs and outputs are fully TTL compatible FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K × 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O Vcc Vss I/O1-I/O8 CE WE CONTROL CIRCUIT OE ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 PIN CONFIGURATION A14 A12 1 28 Vcc 2 27 WE 3 A7 26 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 I/O1 11 I/O2 UT62L256C A6 25 A13 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O8 18 I/O7 12 17 I/O3 13 Vss 14 OE 1 28 A10 A11 2 27 CE A9 3 26 I/O8 A8 4 25 I/O7 A13 5 24 I/O6 WE 6 23 I/O5 Vcc 7 22 I/O4 A14 8 A12 UT62L256C 21 Vss 9 20 I/O3 A7 10 19 I/O2 A6 11 18 I/O1 I/O6 A5 12 17 A0 16 I/O5 A4 13 16 A1 15 I/O4 A3 14 15 A2 PDIP/SOP STSOP/TSOP-I PIN DESCRIPTION SYMBOL A0 - A14 I/O1 - I/O8 CE WE OE VCC VSS DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL RATING -0.5 to 4.5 0 to 70 -65 to 150 1 50 260 VTERM TA TSTG PD IOUT Tsolder UNIT V ℃ ℃ W mA ℃ *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE H L L L OE X H L X I/O OPERATION High - Z High - Z DOUT DIN WE X H H L SUPPLY CURRENT ISB, ISB1 ICC, Icc1, Icc2 ICC, Icc1, Icc2 ICC, Icc1, Icc2 H = VIH, L=VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V ~ 3.6V, TA = 0℃ to 70℃) PARAMETER SYMBOL TEST CONDITION *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VSS ≦VIN ≦VCC Output Leakage ILO VSS ≦VI/O ≦VCC Current CE =VIH or OE = VIH or WE = VIL Output High Voltage VOH IOH= - 1mA Output Low Voltage VOL IOL= 4mA Average Operating ICC Cycle time=Min., - 35 Power supply Current - 70 CE = VIL ,II/O = 0mA , Icc1 Cycle time=1us CE =0.2V; II/O = 0mA other pins at 0.2V or Vcc-0.2V; Icc2 Cycle time=500ns CE =0.2V; II/O = 0mA other pins at 0.2V or Vcc-0.2V Standby Power ISB CE =VIH Supply Current -L ISB1 CE ≧VCC-0.2V -LL MIN. 2.0 - 0.5 -1 -1 TYP. - MAX. VCC+0.5 0.6 1 1 UNIT V V µA µA 2.4 - - 0.4 - 40 - 20 - 6 V V mA mA mA - - 12 mA - - 3 mA - 1 40 - 0.5 20 µA µA Notes: 1. Overshoot : Vcc+3.0v for pulse width less than 10ns. 2. Undershoot : Vss-3.0v for pulse width less than 10ns. 3. Overshoot and Undershoot are sampled, not 100% tested. ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 CAPACITANCE (TA=25℃, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 8 10 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL = 100pF, IOH/IOL = -1mA/4mA AC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V , TA = 0℃ to 70℃) (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z SYMBOL tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH SYMBOL tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* UT62L256C-35 MIN. MAX. 35 35 35 25 10 5 25 25 5 - UT62L256C-70 MIN. MAX. 70 70 70 35 10 5 35 35 5 - UNIT UT62L256C-35 MIN. MAX. 35 30 30 0 25 0 20 0 5 15 UT62L256C-70 MIN. MAX. 70 60 60 0 50 0 30 0 5 25 UNIT ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns *These parameters are guaranteed by device characterization, but not production tested. ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA tOH Dout tOH Previous data valid Data Valid READ CYCLE 2 ( CE and OE Controlled) (1,3,4,5) t RC Address tAA CE tACE OE tCHZ tOE tOHZ tCLZ tOLZ Dout t OH High-Z Data Valid High-Z Notes : 1. WE is high for read cycle. 2.Device is continuously selected OE =low, CE =low. 3.Address must be valid prior to or coincident with CE =low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL=5pF. Transition is measured±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5,6) tW C Address tAW CE t CW t AS tW P tW R WE t W HZ Dout tOW High-Z (4) (4) tDW Din t DH Data Valid WRITE CYCLE 2 ( CE Controlled) (1,2,5,6) tW C A ddress tA W CE tW R tA S tC W tW P WE tW H Z D out H igh-Z (4) tD W D in tD H D ata V alid ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 Notes : 1. WE , CE must be high during all address transitions. 2.A write occurs during the overlap of a low CE , low WE . 3.During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE low transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃) PARAMETER Vcc for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time SYMBOL TEST CONDITION VDR CE ≧ VCC-0.2V IDR Vcc=2.5V tCDR CE ≧ VCC-0.2V See Data Retention Waveforms (below) tR -L - LL MIN. 1.5 TYP. - MAX. 3.6 UNIT V - 1 0.5 20 10 0 - - µA µA ns tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM VDR ≧ 1.5V VCC Vcc(min.) Vcc(min.) tCDR CE VIH tR CE ≧ VCC-0.2V VIH ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 PACKAGE OUTLINE DIMENSION 28 pin 600 mil PDIP PACKAGE OUTLINE DIMENSION UNIT SYMBOL A1 A2 B B1 c D E E1 e eB L S Q1 Θ INCH(BASE) 0.010 (MIN) 0.150±0.005 0.020 (MAX) 0.055 (MAX) 0.012 (MAX) 1.430 (MAX) 0.6 (TYP) 0.52 (MAX) 0.100 (TYP) 0.625 (MAX) 0.180(MAX) 0.06 (MAX) 0.08(MAX) o 15 (MAX) MM(REF) 0.254 (MIN) 3.810±0.127 0.508(MAX) 1.397(MAX) 0.304 (MAX) 36.322 (MAX) 15.24 (TYP) 13.208 (MAX) 2.540(TYP) 15.87 (MAX) 4.572(MAX) 1.524 (MAX) 2.032(MAX) o 15 (MAX) ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 28 pin 330 mil SOP PACKAGE OUTLINE DIMENSION UNIT SYMBOL A A1 A2 b c D E E1 e L L1 S y Θ INCH(BASE) 0.120 (MAX) 0.002(MIN) 0.098±0.005 0.0016 (TYP) 0.010 (TYP) 0.728 (MAX) 0.340 (MAX) 0.465±0.012 0.050 (TYP) 0.05 (MAX) 0.067±0.008 0.047 (MAX) 0.003(MAX) o o 0 ∼10 MM(REF) 3.048 (MAX) 0.05(MIN) 2.489±0.127 0.406(TYP) 0.254(TYP) 18.491 (MAX) 8.636 (MAX) 11.811±0.305 1.270(TYP) 1.270 (MAX) 1.702 ±0.203 1.194 (MAX) 0.076(MAX) o o 0 ∼10 ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10 UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM 28 pin 8x13.4mm STSOP PACKAGE OUTLINE DIMENSION UNIT SYMBOL Note： E dimension is not including end flash The total of both sides’ end flash is Not above 0.3mm. A A1 A2 b c Db E e D L L1 y Θ INCH(BASE) 0.047 (MAX) 0.004±0.002 0.039±0.002 0.006 (TYP) 0.010 (TYP) 0.465±0.004 0.315±0.004 0.022 (TYP) 0.528±0.008 0.020±0.004 0.0315±0.004 0.08(MAX) o o 0 ∼5 MM(REF) 1.20 (MAX) 0.10±0.05 1.00±0.05 0.15(TYP) 0.254(TYP) 11.80±0.10 8.00±0.10 0.55(TYP) 13.40±0.20 0.50±0.10 0.80±0.10 0.003(MAX) o o 0 ∼5 ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 11 UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM 28 pin 8x20mm TSOP-I PACKAGE OUTLINE DIMENSION Note： E dimension is not including end flash The total of both sides’ end flash is Not above 0.3mm. UNIT SYMBOL A A1 A2 b c Db E e D L L1 y Θ INCH(BASE) 0.047 (MAX) 0.004±0.002 0.039±0.002 0.008 (TYP) 0.008 (TYP) 0.465±0.004 0.315±0.004 0.022 (TYP) 0.528±0.008 0.020±0.004 0.0315±0.004 0.003(MAX) o o 0 ∼5 MM(REF) 1.20 (MAX) 0.10±0.05 1.00±0.05 0.20(TYP) 0.15(TYP) 11.80±0.10 8.00±0.10 0.55(TYP) 13.40±0.20 0.50±0.10 0.80±0.10 0.08(MAX) o o 0 ∼5 ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 12 UTRON UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 ORDERING INFORMATION PART NO. UT62L256CPC-35L UT62L256CPC-35LL UT62L256CPC-70L UT62L256CPC-70LL UT62L256CSC-35L UT62L256CSC-35LL UT62L256CSC-70L UT62L256CSC-70LL UT62L256CLS-35L UT62L256CLS-35LL UT62L256CLS-70L UT62L256CLS-70LL UT62L256CLC-35L UT62L256CLC-35LL UT62L256CLC-70L UT62L256CLC-70LL ACCESS TIME (ns) 35 35 70 70 35 35 70 70 35 35 70 70 35 35 70 70 STANDBY CURRENT (µA) typ. 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA PACKAGE 28PIN PDIP 28PIN PDIP 28PIN PDIP 28PIN PDIP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN STSOP 28PIN STSOP 28PIN STSOP 28PIN STSOP 28PIN TSOP-I 28PIN TSOP-I 28PIN TSOP-I 28PIN TSOP-I ORDERING INFORMATION (for lead free product) PART NO. UT62L256CPCL-35L UT62L256CPCL-35LL UT62L256CPCL-70L UT62L256CPCL-70LL UT62L256CSCL-35L UT62L256CSCL-35LL UT62L256CSCL-70L UT62L256CSCL-70LL UT62L256CLSL-35L UT62L256CLSL-35LL UT62L256CLSL-70L UT62L256CLSL-70LL UT62L256CLCL-35L UT62L256CLCL-35LL UT62L256CLCL-70L UT62L256CLCL-70LL ACCESS TIME (ns) 35 35 70 70 35 35 70 70 35 35 70 70 35 35 70 70 STANDBY CURRENT (µA) typ. 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA 1 µA 0.5 µA PACKAGE 28PIN PDIP 28PIN PDIP 28PIN PDIP 28PIN PDIP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN STSOP 28PIN STSOP 28PIN STSOP 28PIN STSOP 28PIN TSOP-I 28PIN TSOP-I 28PIN TSOP-I 28PIN TSOP-I ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 13 UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. ___________________________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80057 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 14