ETC DG758BX

DG758BX45
DG758BX45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4095-5.3
DS4095-6.0 January 2000
APPLICATIONS
KEY PARAMETERS
3000A
ITCM
VDRM
4500V
IT(AV)
870A
dVD/dt
1000V/µs
diT/dt
300A/µs
■ Variable speed A.C. motor drive inverters (VSD-AC).
■ Uninterruptable Power Supplies
■ High Voltage Converters.
■ Choppers.
■ Welding.
■ Induction Heating.
■ DC/DC Converters.
FEATURES
■ Double Side Cooling.
■ High Reliability In Service.
■ High Voltage Capability.
■ Fault Protection Without Fuses.
■ High Surge Current Capability.
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
Outline type code: X.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG758BX45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
4500
16
Conditions
Tvj = 125oC, IDM = 100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
3000
A
ITCM
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 6µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
870
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
1365
A
1/19
DG758BX45
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
LS
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
16.0
kA
I2t for fusing
10ms half sine. Tj =125oC
1.28 x 106
A2s
Critical rate of rise of on-state current
VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
100
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
200
nH
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
-
GATE RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
100
A
Average forward gate power
-
20
W
Peak reverse gate power
-
24
kW
PFG(AV)
PRGM
This value maybe exceeded during turn-off
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.0146
o
Anode side cooled
-
0.0233
o
Cathode side cooled
-
0.0392
o
-
0.0036
o
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Conditions
Clamping force 35.0kN
With mounting compound
per contact
C/W
C/W
C/W
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
-40
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
33.0
37.0
kN
TOP/Tstg
-
2/19
C/W
C
C
DG758BX45
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 3000A peak, IG(ON) = 8A d.c.
-
4.0
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.2
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
3.5
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2250V
-
3000
mJ
td
Delay time
IT = 3000A, dIT/dt = 300A/µs
-
1.5
µs
tr
Rise time
IFG = 40A, rise time < 1.0µs
-
3.0
µs
Turn-off energy
-
6300
mJ
tgs
Storage time
-
20.6
µs
tgf
Fall time
IT = 3000A, VDM = 3000V
-
2.2
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 6.0µF,
-
22.8
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
-
10000
µC
QGQT
Total turn-off gate charge
-
20000
µC
IGQM
Peak reverse gate current
-
830
A
EOFF
3/19
DG758BX45
2.0
8.0
1.5
6.0
4.0
1.0
VGT
IGT
0.5
0
-50
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
-25
75
0
25
50
100
Junction temperature Tj - (˚C)
2.0
0
125
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Instantaneous on-state current - (A)
5000
Measured under pulse
conditions IG(ON) = 8A
4000
Tj = 25˚C
3000
Tj = 125˚C
2000
1000
0
1.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Instantaneous on-state voltage - (V)
FIG 2 MAXIMUM
ON characteristics
STATE CHARACTERISTICS
Fig.2LIMIT
On-state
4/19
1.5
DG758BX45
Maximum permissible turn-off
current ITCM - (A)
3000
2500
2000
1500
1000
Conditions:
Tj = 125˚C,
VDM = 2000V
dIGQ/dt = 40A/µs
500
0
0
1.0 2.0 3.0 4.0 5.0 6.0
Snubber capacitance Cs - (µF)
Fig.3 Maximum dependence of ITCM on CS
0.015
dc
0.010
0.005
0
0.001
0.01
0.1
Time - s
10
1.0
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state
current - (kA)
Thermal impedance - ˚C/W
0.020
40
30
20
10
0
0.0001
0.001
0.01
0.1
Pulse duration - (ms)
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
DG758BX45
Mean on-state power dissipation - (W)
4000
dc
Conditions;
IG(ON) = 8A
3500
180˚
3000
120˚
2500
60˚
2000
30˚
1500
1000
500
0
0
200
400 600 800 1000 1200 1400
Mean on-state current - (A)
65 70
80
90 100 110 120
Maximum permissible case
temperature - (˚C)
Mean on-state power dissipation- (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
3000
Conditions;
IG(ON) = 8A
2500
120˚
180˚
90˚
60˚
2000
30˚
1500
1000
500
0
0
100
200 300 400 500 600
Mean on-state current - (A)
700
800 900 80 100 120
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
140
130
DG758BX45
Conditions:
T = 25˚C
2000 j
IFGM = 40A
Cs = 6µF
1750 Rs = 4.4 Ohms
dI/dt = 300A/µs
VD = 2250V
1500
VD = 1500V
1250
VD = 750V
1000
750
500
250
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.8 Turn-on energy vs on-state current
2500
2250
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
2250
2000
VD = 2250V
1750
1500
VD = 1500V
1250
1000
VD = 750V
750 Conditions:
IT = 3000A, Tj = 25˚C
Cs = 6µF, Rs = 4.4 Ohms, dIT/dt = 300A/µs
500
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
80
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG758BX45
Turn-on energy loss EON - (mJ)
3000
Conditions:
Tj = 125˚C, IFGM = 40A
2500 Cs
= 6µF, Rs = 4.4Ω
dIT/dt = 300A/µs
2000 dIFG/dt = 40A/µs
VD = 2250V
VD = 1500V
1500
1000
VD = 750V
500
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.10 Turn-on energy vs on-state current
3000
3500
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 6µF
2500 Rs = 4.4 Ohms
IFGM = 40A
3250
2750
2500
VD = 2250V
2250
2000
1750
VD = 1500V
1500
1250
VD = 1500V
2000
1500
VD = 750V
1000
VD = 750V
1000 Conditions:
IT = 3000A, Tj = 125˚C
Cs = 6µF, Rs = 4.4Ω,
750
dIT/dt = 300A/µs,
dIFG/dt = 40A/µs
500
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
3000
VD = 2250V
500
0
80
0
50 100 150 200 250 300
Rate of rise of on-state current dIT/dt - (A/µs)
Fig.12 Turn-on energy vs rate of rise of on-state current
3.0
tr
2.5
2.0
td
1.5
Conditions:
Tj = 125˚C, IFGM = 40A
Cs = 6µF, Rs = 4.4Ω,
dIT/dt = 300A/µs, VD = 2250V,
dIFG/dt = 40A/µs
1.0
0.5
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.13 Delay time & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (µs)
Turn-on delay time and rise time - (µs)
DG758BX45
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 6µF
Rs = 4.4Ω
dIT/dt = 300A/µs
VD = 2250V
dIFG/dt = 40A/µs
4.5
4.0
3.5
3.0
2.5
tr
2.0
1.5
td
1.0
0.5
0
0
10
20
30
40
50
60
70
Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG758BX45
Turn-off energy loss EOFF - (J)
4.0
Conditions:
Tj = 25˚C
3.5 Cs
= 6µF
dIGQ/dt = 40A/µs
3.0
VDM = 3000V
VDM = 2000V
2.5
VDM = 1000V
2.0
1.5
1.0
0.5
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.15 Turn-off energy vs on-state current
4.0
Turn-off energy per pulse EOFF - (J)
Conditions:
IT = 3000A
3.8 Tj = 25˚C
Cs = 6µF
3.6
3.4
VDM = 3000V
VDM = 2000V
3.2
3.0
2.8
2.6
VDM = 1000V
2.4
2.2
2.0
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
DG758BX45
Conditions:
Tj = 125˚C
6.0 Cs
= 6µF
dIGQ/dt = 40A/µs
5.0
VDM = 3000V
VDM = 2000V
4.0
VDM = 1000V
3.0
2.0
1.0
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.17 Turn-off energy vs on-state current
7.0
Turn-off energy per pulse EOFF - (J)
Turn-off energy loss EOFF - (J)
7.0
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 6µF
VDM = 3000V
6.0
VDM = 2000V
5.0
4.0
VDM = 1000V
3.0
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG758BX45
Turn-off energy per pulse EOFF - (J)
6.0
Cs = 4.0µF
Conditions:
T = 125˚C
5.0 Vj = 2000V
DM
dIGQ/dt = 40A/µs
4.0
Cs = 6.0µF
Cs = 2.0µF
Cs = 1.0µF
3.0
2.0
1.0
0
0
500
2500
1000
1500
2000
On-state current - (A)
3000
Fig.19 Turn-off energy vs on-state current
25
Conditions:
Cs = 6µF
dIGQ/dt = 40A/µs
Gate storage time tgs - (µs)
20
Tj = 125˚C
15
Tj = 25˚C
10
5
0
0
500
1000
1500
2000
On-state current - (A)
Fig.20 Gate storage time vs on-state current
12/19
2500
3000
DG758BX45
30
Tj = 125˚C
Conditions:
IT = 3000A
Cs = 6µF
25
Gate storage time tgs - (µs)
Tj = 25˚C
20
15
10
5
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.5
Conditions:
Cs = 6µF
dIGQ/dt = 40A/µs
Tj = 125˚C
Gate fall time tgf - (µs)
2.0
Tj = 25˚C
1.5
1.0
0.5
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.22 Gate fall time vs on-state current
13/19
DG758BX45
2.5
Tj = 125˚C
Tj = 25˚C
Gate fall time tgf - (µs)
2.0
1.5
1.00
Conditions:
IT = 3000A
Cs = 6µF
0.5
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
900
Conditions:
Cs = 6µF
800
dIGQ/dt = 40A/µs
Tj = 125˚C
700
Tj = 25˚C
600
500
400
300
200
100
0
500
1000
1500
2000
On-state current - (A)
2500
Fig.24 Peak reverse gate current vs turn-off current
14/19
3000
DG758BX45
1000
Peak reverse gate current IGQM - (A)
Conditions:
IT = 3000A
Cs = 6µF
900
800
700
Tj = 125˚C
Tj = 25˚C
600
500
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (mC)
10.0
Conditions:
Cs = 6µF
dIGQ/dt = 40A/µs
Tj = 125˚C
7.5
Tj = 25˚C
5.0
2.5
0
0
500
1000
1500
2000
On-state current - (A)
2500
3000
Fig.26 Turn-off gate charge vs on-state current
15/19
DG758BX45
Turn-off gate charge QGQ - (mC)
15.0
Conditions:
IT = 3000A
Cs = 6µF
12.5
Tj = 125˚C
10.0
Tj = 25˚C
7.5
5.0
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
Tj = 125˚C
500
0
0.1
VD = 2250V
VD = 3000V
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG758BX45
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate condition:
ITCM = 3000A
IFG = 40A
IG(ON) = 8A d.c.
tw1(min) = 10µs
IGQM = 830A
diGQ/dt = 40A/µs
QGQ = 10000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Mitel Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG758BX45
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (one in each electrode).
15˚
63 max
Anode
26.0 ±0.5
Ø112 max
Ø66
9.6
Ø70
63 max
Nominal weight: 1200g
Clamping force: 35kN ±10%
Lead length: 505mm
Package outine type code: X
18/19
Cathode
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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