DYNEX DGT304SE13

DGT304SE13
DGT304SE
Gate Turn-off Thyristor
Replaces January 2000 version, DS4609-4.0
DS4609-4.1 February 2002
APPLICATIONS
KEY PARAMETERS
700A
ITCM
VDRM
1300V
IT(AV)
250A
dVD/dt
500V/µs
diT/dt
500A/µs
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: E.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DGT304SE13
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
1300
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
700
A
ITCM
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
250
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
390
A
1/13
DGT304SE13
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
4.0
kA
I2t for fusing
10ms half sine. Tj =125oC
80000
A2s
Critical rate of rise of on-state current
VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,
Rise time < 1.0µs
500
A/µs
Rate of rise of off-state voltage
To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
GATE RATINGS
Symbol
Parameter
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
50
A
Average forward gate power
-
10
W
Peak reverse gate power
-
6
kW
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
10
50
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
40
-
µs
Min.
Max.
Units
Double side cooled
-
0.075
o
Anode side cooled
-
0.12
o
Cathode side cooled
-
0.20
o
-
0.018
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
5.0
6.0
kN
THERMAL RATINGS
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/13
Conditions
Clamping force 5.5kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
DGT304SE13
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 600A peak, IG(ON) = 2A d.c.
-
2.2
V
IDM
Peak off-state current
At = VDRM, VRG = 2V
-
25
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
0.9
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 900V, IT = 600A, dIT/dt = 300A/µs
-
130
mJ
td
Delay time
IFG = 20A, rise time < 1.0µs
-
1.5
µs
tr
Rise time
RL = (Residual inductance 3µH)
-
3.0
µs
-
350
mJ
EOFF
Turn-off energy
tgs
Storage time
IT =600A, VDM = 750V
-
10
µs
tgf
Fall time
Snubber Cap Cs = 1.5µF,
-
11
µs
tgq
Gate controlled turn-off time
diGQ/dt = 15A/µs
-
0.9
µs
QGQ
Turn-off gate charge
RL = (Residual inductance 3µH)
-
700
µC
QGQT
Total turn-off gate charge
-
1400
µC
3/13
DGT304SE13
CURVES
Fig.1 Gate characteristics
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dependence of ITCM on CS
Fig.4 Maximum (limit) transient thermal resistance
Fig.5 Surge (non-repetitive) on-state current vs time
4/13
DGT304SE13
Fig.6 Steady state rectangulerwave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
5/13
DGT304SE13
6/13
Fig.8 Turn-on energy vs on-state current
Fig.9 Turn-on energy vs peak forward gate current
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
DGT304SE13
Fig.12 Turn-on energy vs rate of rise of on-state current
Fig.13 Delay time and rise time vs on-state current
Fig.14 Delay time and rise time vs peak forward gate current
Fig.15 Turn-off energy vs on-state current
7/13
DGT304SE13
Fig.16 Turn-off energy vs rate of rise of reverse gate current
Fig.17 Turn-off energy vs on-state current
Fig.18 Turn-off energy vs rate of rise of reverse gate current
Fig.19 Turn-off energy vs on-state current with CS as parameter
8/13
DGT304SE13
Fig.20 Storage time vs on-state current
Fig.21 Storage time vs rate of rise of reverse gate current
Fig.22 Fall time vs on-state current
Fig.23 Fall time vs rate of rise of reverse gate current
9/13
DGT304SE13
Fig.24 Peak reverse gate current vs on-state current
Fig.25 Peak reverse gate current vs rate of rise of reverse
gate current
Fig.26 Turn-off gate charge vs on-state current
Fig.27 Turn-off gate charge vs rate of rise of reverse
gate current
10/13
DGT304SE13
Anode voltage and current
Fig.28 Dependence of critical dVD/dt on gate-cathode
resistance and gate-cathode reverse voltage
0.9VD
0.9IT
dVD/dt
VD
IT
0.1VD
td
ITAIL
VDP
tgs
tr
Recommended gate conditions:ITCM = 700A
IFG = 20A
dIFG/dt = 20A/µs
IG(ON) = 2A d.c.
t
= 4.5µs
w1(min)
VD VDM
IGQM = 120A
dIGQ/dt = 15A/µs
QGQ = 700µc
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor
conditions. Other conditions are permitted
according to users gate drive specifications.
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Fig.29 General switching waveforms
11/13
DGT304SE13
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
Gate
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V , r on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
TO
12/13
T
DGT304SE13
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS4609-4 Issue No. 2.0 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
13/13