ETC DIM125CHS06-S

DIM125CHS06-S000
DIM125CHS06-S000
Half Bridge IGBT Module
PDS5727-1.2 February 2004
FEATURES
■
n - Channel
■
High Switching Speed
■
Low Forward Voltage Drop
■
Isolated Base
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
600V
2.1V
125A
250A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
PWM Motor Control
■
UPS
7(E2)
6(G2)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
1(E1C2)
2(E2)
The DIM125CHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
3(C1)
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm drivesand
ups systems.
ORDERING INFORMATION
Order as:
DIM125CHS06-S000
Note: When ordering, use complete part number.
Outline type code: C
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/8
DIM125CHS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
600
V
±20
V
Continuous collector current
Tcase = 65˚C
125
A
IC(PK)
Peak collector current
1ms, Tcase = 95˚C
250
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
579
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
TBD
kA2s
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2.5
kV
IC
I2t
Visol
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3
Baseplate material: Cu
Creepage distance: 20mm
Test Conditions
Parameter
Symbol
Rth(j-c)
Clearance: 11mm
CTI (Critical Tracking Index): TBD
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
0.216
˚C/W
-
-
0.405
˚C/W
-
-
0.03
˚C/W
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
3
-
5
Nm
2.5
-
5
Nm
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M5
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM125CHS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
0.5
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
5
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
0.5
µA
VGE(TH)
Gate threshold voltage
IC = 5mA, VGE = VCE
4.5
5.5
7.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 125A
-
2.1
2.6
V
VGE = 15V, IC = 125A, , Tcase = 125˚C
-
2.3
2.8
V
Parameter
Symbol
ICES
IGES
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
125
A
IFM
Diode maximum forward current
tp = 1ms
-
-
250
A
VF†
Diode forward voltage
IF = 125A
-
1.5
1.8
V
IF = 125A, Tcase = 125˚C
-
1.5
1.8
V
VCE = 25V, VGE = 0V, f = 1MHz
-
14
-
nF
-
nH
Cies
Input capacitance
LM
Module inductance
-
-
15
Internal transistor resistance - per arm
-
-
0.12
RINT
mΩ
Note:
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + LM
†
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/8
DIM125CHS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 125A
-
600
-
ns
Fall time
VGE = ±15V
-
250
-
ns
EOFF
Turn-off energy loss
VCE = 300V
-
10
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 10Ω
-
330
-
ns
L ~ 100nH
-
130
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
6
-
mJ
Qg
Gate charge
-
1
-
µC
Qrr
Diode reverse recovery charge
IF = 125A, VR = 300V,
-
8
-
µC
Irr
Diode reverse current
dIF/dt = 3600A/µs
-
93
-
A
-
2
-
mJ
Min.
Typ.
Max.
Units
IC = 125A
-
650
-
ns
Fall time
VGE = ±15V
-
500
-
ns
EOFF
Turn-off energy loss
VCE = 300V
-
15
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 10Ω
-
400
-
ns
L ~ 100nH
-
160
-
ns
-
9
-
mJ
IF = 125A, VR = 300V,
-
12
-
µC
dIF/dt = 3600A/µs
-
100
-
A
-
3
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/8
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM125CHS06-S000
TYPICAL CHARACTERISTICS
250
225
200
250
Common emitter
Tcase = 125˚C
225 V is measured at power
ce
busbars and not the
200 auxiliary terminals
Common emitter
Tcase = 25˚C
Vce is measured at power
busbars and not the
auxiliary terminals
Collector current, Ic - (A)
Collector current, Ic - (A)
175
150
125
100
175
150
125
100
75
75
50
50
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
25
0
0
1
2.0
3
4
Collector-emitter voltage, Vce - (V)
25
0
0
5
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
20.0
22.5
Conditions:
Tcase = 125ºC
20.0 Vcc = 300V
Rg = 10 ohms
Eon
Eoff
Erec
17.5
Conditions:
Tcase = 125ºC
17.5 Vcc = 300V
IC = 125A
15.0
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
15.0
12.5
12.5
10.0
10.0
7.5
7.5
Eon
Eoff
Erec
5.0
5.0
2.5
2.5
0
0
25
50
75
100
Collector current, IC - (A)
125
Fig. 5 Typical switching energy vs collector current
150
0
4
8
20
24
12
16
Gate Resistance, Rg - (Ohms)
32
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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28
5/8
DIM125CHS06-S000
250
450
VF is measured at power busbars
and not the auxiliary terminals
225
400
Tj = 25˚C
Tj = 125˚C
200
350
Collector current, IC - (A)
Foward current, IF - (A)
175
150
125
100
75
300
250
200
150
100
50
50
25
0
0
0.5
2.0
1.0
1.5
Foward voltage, VF - (V)
2.5
Tj = 125˚C
Vge = ±15V
Rg = 10 Ohms
Module IC
Chip IC
0
0
3.0
Fig. 7 Diode typical forward characteristics
600
200
400
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
100
1000
Tj = 125˚C
Transistor
Diode
Transient thermal impedance, Zth (j-c) - (°C/kW )
90
Reverse recovery current, Irr - (A)
80
70
60
50
40
30
20
100
10
IGBT
10
Diode
0
0
100
200
300
400
500
Reverse voltage, VR - (V)
600
Fig. 9 Diode reverse bias safe operating area
6/8
800
700
1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
5.0822
0.1069
9.2864
0.0895
2
20.1290
4.363
51.6416
2.6571
0.1
Pulse width, tp - (s)
3
27.2812
21.9182
48.3218
17.3886
1
4
162.5310
92.4022
295.8212
71.8108
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM125CHS06-S000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
4(G1)
5(E1)
Nominal weight: 250g
Module outline type code: C
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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