2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5 (1) (2) 3.0 0.5 (1) Base (2) Collector (3) Emitter 0.4 1.5 1.5 0.4 (3) ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 31±4 31±4 V V Emitter-base voltage VEBO 5 2 3 Parameter V A(DC) A(Pulse) ∗ 1 W W ∗2 Collector current IC Collector power dissipation PC 0.5 2 Tj Tstg 150 −55 ∼ +150 Junction temperature Storage temperature °C °C ∗ 1 Pw=20ms , duty=1 / 2 ∗ 2 When mounted on a 40 × 40 × 0.7 mm ceramic board. !Packaging specifications and hFE Type 2SD2167 Package hFE MPT3 NPQ Marking DL∗ Code Basic ordering unit (pieces) T100 1000 ∗ Denotes hFE !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 27 27 − − 35 35 V V IC = 50µA IC = 1mA Emitter-base breakdown voltage Collector cutoff current BVEBO 5 − − − 1 1 µA µA IE = 50µA VCB = 20V IEBO − − − V ICBO − − 1 V − 0.25 − 0.5 270 V − 100 − − MHz pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance VCE(sat) hFE 56 fT − − Cob 25 Conditions VEB = 5V IC/IB = 2A/0.2A IC/IB = 1A/50mA ∗ ∗ VCE/IC = 3V/0.5A VCE = 3V , IE = −0.5A , f= 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ ∗ Measured using pulse current. 1/1