APT11GF120BRD
1200V
22A
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
TO-247
G
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11GF120BRD
VCES
Collector-Emitter Voltage
1200
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
1200
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
22
I C2
Continuous Collector Current @ TC = 110°C
11
Pulsed Collector Current
1
@ TC = 25°C
44
I CM2
Pulsed Collector Current
1
@ TC = 110°C
22
PD
Total Power Dissipation
TL
Amps
125
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
±20
I CM1
TJ,TSTG
C
E
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
2.5
3.0
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C)
3.1
3.7
1200
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.6mA)
Gate Threshold Voltage
UNIT
4.5
(VCE = VGE, I C = 350µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.6
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
3.0
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6258 Rev B 9-2000
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Symbol
Test Conditions
Characteristic
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
800
130
200
f = 1 MHz
38
55
Gate Charge
VGE = 15V
55
35
I C = I C2
6
Resistive Switching (25°C)
10
VGE = 15V
50
pF
nC
ns
110
RG = 10Ω
Fall Time
UNIT
55
I C = I C2
13
Turn-on Delay Time
Inductive Switching (125°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
Turn-off Delay Time
20
90
I C = I C2
Turn-on Switching Energy
3
R G = 10Ω
.5
TJ = +125°C
1.0
3
Rise Time
13
20
VGE = 15V
Turn-off Delay Time
3
Ets
Total Switching Losses
gfe
Forward Transconductance
R G = 10Ω
90
TJ = +25°C
1.0
VCE = 20V, I C = I C2
ns
110
I C = I C2
Fall Time
mJ
1.5
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
Turn-on Delay Time
ns
125
VGE = 15V
Fall Time
Total Switching Losses
tf
600
VCC = 0.8VCES
Ets
td(off)
MAX
VCC = 0.5VCES
Turn-off Switching Energy
tr
TYP
VCE = 25V
Eoff
td(on)
MIN
Capacitance
VGE = 0V
Cies
td(on)
APT11GF120BRD
mJ
4.7
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
052-6258 Rev B 9-2000
WT
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
1.00
Junction to Case (FRED)
0.90
°C/W
40
Junction to Ambient
Package Weight
UNIT
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT11GF120BRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
APT11GF120BRD
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
30
RMS Forward Current
70
IF(RMS)
IFSM
Amps
210
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol
Characteristic / Test Conditions
MIN
TYP
IRM
LS
Maximum Forward Voltage
UNIT
2.5
IF = 30A
VF
MAX
2.0
IF = 60A
Volts
IF = 30A, TJ = 150°C
2.0
Maximum Reverse Leakage Current
VR = VR Rated
250
Maximum Reverse Leakage Current
VR = VR Rated, TJ = 125°C
500
10
Series Inductance (Lead to Lead 5mm from Base)
µA
nH
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
85
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
70
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
160
tfr1
Forward Recovery Time
TJ = 25°C
255
tfr2
IF = 30A, diF /dt = 240A/µs, VR = 650V
TJ = 100°C
255
IRRM1
Reverse Recovery Current
TJ = 25°C
7
12
IRRM2
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
12
20
Qrr1
Recovery Charge
TJ = 25°C
660
Qrr2
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
1640
Vfr1
Forward Recovery Voltage
TJ = 25°C
15
Vfr2
IF = 30A, diF /dt = 240A/µs, VR = 650V
TJ = 100°C
20
Rate of Fall of Recovery Current
TJ = 25°C
245
IF = 30A, diF /dt = -240A/µs, VR = 650V (See Figure 10)
TJ = 100°C
160
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6258 Rev B 9-2000
Symbol
APT11GF120BRD
2400
80
60
TJ = 25°C
20
TJ = 100°C
TJ = -55°C
0
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
2000
60A
1600
30A
1200
800
15A
400
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
2.0
50
TJ = 100°C
VR = 650V
60A
40
30A
30
15A
20
10
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
TJ = 100°C
VR = 650V
1.6
Qrr
trr
1.2
IRRM
0.8
trr
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
250
-50
2000
60A
30A
150
15A
100
50
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
200
100
TJ = 100°C
VR = 650V
IF = 30A
TJ = 100°C
VR = 650V
1600
80
Vfr
1200
60
800
40
400
20
tfr
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
1.0
D=0.5
0.2
0.1
0.1
0.05
0.05
NOTE:
0.02
0.01
SINGLE PULSE
0.01
PDM
ZΘJC, THERMAL IMPEDANCE
(°C/W)
052-6258 Rev B 9-2000
0.5
t1
t2
0.005
DUTY FACTOR D = t1 / t2
PEAK TJ =PDM x Z JC + TC
0.001 -5
10
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
40
TJ = 150°C
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
IF, FORWARD CURRENT
(AMPERES)
100
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT11GF120BRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
052-6258 Rev B 9-2000
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector
(Cathode)
Emitter
(Anode)