ETC HAT2057RA

HAT2057RA
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-1636 (Z)
1st. Edition
Feb. 2003
Features
•
•
•
•
Low on-resistance
Capable of 1.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2057RA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
+6,-3
V
Drain current
ID
4
A
Drain peak current
ID(pulse)Note1
32
A
Body–drain diode reverse drain current
IDR
4
A
Channel dissipation
Pch Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Rev.0, Feb. 2003, page 2 of 5
HAT2057RA
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
20
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
±0.2
µA
VGS = +6 V, -3V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 10 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.15
—
0.90
V
VDS = 10 V, I D = 1mA
Static drain to source on state
RDS(on)
—
26
33
mΩ
ID = 2 A,VGS = 4 V Note4
resistance
RDS(on)
—
40
60
mΩ
ID = 2 A,VGS = 1.5 V
Forward transfer admittance
|yfs|
8
13
—
S
ID = 2 A,VDS = 10 V Note4
Input capacitance
Ciss
—
1100
—
pF
VDS = 10 V
Output capacitance
Coss
—
155
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
125
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
VGS = 4 V, ID = 2 A
Rise time
tr
—
25
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
65
—
ns
Rg = 4.7 Ω
Fall time
tf
—
13
—
ns
RL = 5 Ω
Body–drain diode forward voltage
VDF
—
0.80
1.04
V
IF = 4 , VGS = 0 Note4
Body–drain diode reverse recovery
time
trr
—
40
—
ns
IF = 4A, VGS = 0
diF/ dt =20 A/µs
Note4
Notes: 4. Pulse test
Rev.0, Feb. 2003, page 3 of 5
HAT2057RA
Package Dimensions
As of July, 2002
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Rev.0, Feb. 2003, page 4 of 5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
HAT2057RA
Disclaimer
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.0, Feb. 2003, page 5 of 5