HITACHI 2SK1775

2SK1775
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D
G
1
S
2
3
1. Gate
2. Drain
3. Source
2SK1775
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
8
A
20
A
8
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1775
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
900
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 720 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
1.2
1.6
Ω
ID = 4 A
VGS = 10 V*1
Forward transfer admittance
|yfs|
3.5
5.5
—
S
ID = 4 A
VDS = 20 V*1
Input capacitance
Ciss
—
1730
—
pF
VDS = 10 V
Output capacitance
Coss
—
700
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
310
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
25
—
ns
ID = 4 A
Rise time
tr
—
135
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
185
—
ns
RL = 7.5 Ω
Fall time
tf
—
130
—
ns
Body to drain diode forward
voltage
VDF
—
0.9
—
V
I F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
900
—
ns
I F = 8 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
See characteristic curves of 2SK1342
3
2SK1775
Power vs. Temperature Derating
Maximum Safe Operation Area
50
30
Drain Current I D (A)
Channel Dissipation Pch (W)
90
60
30
10
n)
10
n
io is (o
10
at rea S
r
0
PW
µs
pe a R D
1
O this by
=
D
m
d
C
n
1
s
i ite
0
O
m
pe
lim
s
ra
(1
tio
Sh
n
ot
(T
)
c
=
25
°C
)
3
1
0.3
0.1
µs
Ta = 25°C
0.05
0
50
100
150
1
Normalized Transient Thermal Impedance γS (t)
10
100 300 1000
30
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
4
3
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, TC = 25°C
0.1
0.1
0.03
0.01
10 µ
0.05
PDM
0.02
0.01
ulse
ot P
1 Sh
100 µ
T
1m
10 m
Pulse Width PW (s)
100 m
PW
1
D = PW
T
10
15.6 ± 0.3
5.5 ± 0.3
5.0
1.6
1.4 Max
3.2
21.0 ± 0.5
4.0
2.6
1.4 Max
2.7
19.9 ± 0.3
φ3.2
+ 0.4
– 0.2
5.0 ± 0.3
Unit: mm
1.0 ± 0.2
5.45 ± 0.5
0.6 ± 0.2
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PFM
—
—
5.6 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
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products.
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