ETC BCX56-10R1

BCX56-10R1
Preferred Device
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-89
package, which is designed for medium power surface mount
applications.
• High Current: 1.0 Amp
• Available in 7 inch/1000 unit Tape and Reel
• Device Marking: BK
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MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
1
Adc
1.56
13
0.67
5.0
Watts
mW/°C
Watts
mW/°C
TJ, Tstg
–65 to 150
°C
Symbol
Max
Collector Current
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
(Note 1.)
(Note 2.)
Operating and Storage
Temperature Range
COLLECTOR 2
BASE
1
EMITTER
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction-to-Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
RθJA
(Note 1.)
(Note 2.)
Unit
°C/W
1
YM
2
3
BK
SOT–89
CASE 1213
STYLE 2
80
190
TL
Y = Year Code
M = Month Code
BK = Device Code
°C
Sec
260
10
1. FR–4 @ 1.0 X 1.0 inch Pad
2. FR–4 @ Minimum Pad
ORDERING INFORMATION
Device
Package
Shipping
BCX56–10R1
SOT–89
1000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BCX56–10R1/D
BCX56–10R1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
100
–
–
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
–
–
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
–
–
Vdc
Collector-Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
–
–
100
nAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
–
–
10
µAdc
25
63
25
–
–
–
–
160
–
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3.)
hFE
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
–
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
–
–
0.5
Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
–
–
1.0
Vdc
fT
–
130
–
MHz
DYNAMIC CHARACTERISTICS
Current-Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
1000
TJ = 125°C
TJ = 25°C
100
10
TJ = -55°C
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
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2
1000
BCX56–10R1
1000
80
60
C, CAPACITANCE (pF)
f,
T CURRENTGAIN BANDWIDTH PRODUCT (MHz
TYPICAL ELECTRICAL CHARACTERISTICS
100
TJ = 25°C
40
Cibo
20
10
8.0
6.0
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Cobo
4.0
0.1
1000
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
1.0
V, VOLTAGE (VOLTS)
0.8
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
200
500
1.0
TJ = 25°C
0.8
0.6
200°C
50
mA
IC = 10mA
100mA
250mA
500mA
0.4
0.2
0
0.05
Figure 4. “On” Voltages
0.1
0.2
0.5
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
20
Figure 5. Collector Saturation Region
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
150°C
STEP 5
STEP 6 STEP 7
STEP 4
HEATING
VENT COOLING
HEATING
ZONES 3 & 6 ZONES 4 & 7
205° TO
SPIKE"
SOAK"
219°C
170°C
PEAK AT
SOLDER
160°C
JOINT
150°C
100°C
100
Figure 3. Capacitance
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 2. Current-Gain – Bandwidth Product
50
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 6. Typical Solder Heating Profile
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3
50
BCX56–10R1
PACKAGE DIMENSIONS
SOT–89
(3–LEAD)
CASE 1213–02
ISSUE C
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. 1213-01 OBSOLETE, NEW STANDARD 1213-02.
C
J
F
–B–
L
K
D
0.10
E
G
M
T B
S
A
S
–T–
SEATING
PLANE
2 PL
0.10
M
T B
S
A
S
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
MIN
MAX
4.40
4.60
2.40
2.60
1.40
1.60
0.37
0.57
0.32
0.52
1.50
1.83
1.50 BSC
3.00 BSC
0.30
0.50
0.80
----4.25
INCHES
MIN
MAX
0.173
0.181
0.094
0.102
0.055
0.063
0.015
0.022
0.013
0.020
0.059
0.072
0.059 BSC
0.118 BSC
0.012
0.020
0.031
----0.167
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
H
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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PUBLICATION ORDERING INFORMATION
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4
BCX56–10R1/D