ETC STD20NF10T4

STD20NF10
N-CHANNEL 100V - 0.038 Ω - 25A IPAK/DPAK
LOW GATE CHARGE STripFET II POWER MOSFET
■
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STD20NF10
100 V
<0.045 Ω
25 A(*)
TYPICAL RDS(on) = 0.038 Ω
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
3
3
1
2
1
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Unit
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID(*)
Drain Current (continuous) at TC = 25°C
25
A
ID
Drain Current (continuous) at TC = 100°C
21
A
Drain Current (pulsed)
100
A
Total Dissipation at TC = 25°C
85
W
V DGR
IDM(•)
Ptot
Derating Factor
0.57
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
E AS (2)
Single Pulse Avalanche Energy
300
mJ
-55 to 175
°C
Tstg
Tj
Storage Temperature
Operating Junction Temperature
(•) Pulse width limit ed by safe operating area.
(*) Current Limited by Package
October 2002
.
Value
Drain-source Voltage (VGS = 0)
V DS
(1) ISD ≤25A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 10 A, VDD = 27V
1/9
STD20NF10
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
°C/W
°C/W
°C
1.76
100
300
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±1
µA
V(BR)DSS
100
V
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
R DS(on)
Static Drain-source On
Resistance
VGS = 10 V
I D = 250 µA
Min.
Typ.
Max.
Unit
2
3
4
V
0.038
0.045
Ω
Typ.
Max.
Unit
ID = 15 A
DYNAMIC
Symbol
2/9
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 15 A
Min.
10
S
1200
180
80
pF
pF
pF
STD20NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
I D = 15 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, Figure 3)
15
40
Qg
Qgs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 80 V ID= 30 A VGS=10 V
40
8
15
55
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Test Conditions
Min.
VDD = 50 V
I D = 15 A
VGS = 10 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
Turn-off Delay Time
Fall Time
45
10
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 20 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 30 A
di/dt = 100A/µs
T j = 150°C
VDD = 55 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
(*)Pulsed: Pulse duration = 300 µs, duty cycle
(•)Pulse width limit ed by safe operating area.
Safe Operating Area
Test Conditions
Min.
Typ.
VGS = 0
110
390
7.5
Max.
Unit
30
120
A
A
1.3
V
ns
µC
A
1.5 %.
Thermal Impedance
3/9
STD20NF10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD20NF10
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
5/9
STD20NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD20NF10
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
7/9
STD20NF10
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
8/9
STD20NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
9/9