ETC STD25NF10T4

STD25NF10
N-CHANNEL 100V - 0.033Ω - 25A DPAK
LOW GATE CHARGE STripFET POWER MOSFET
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STD25NF10
100 V
< 0.038 Ω
25 A
TYPICAL RDS(on) = 0.033Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
DPAK
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Drain-source Voltage (VGS = 0)
Value
Unit
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID (*)
Drain Current (continuos) at TC = 25°C
25
A
ID
Drain Current (continuos) at TC = 100°C
21
A
IDM (l )
Drain Current (pulsed)
100
A
PTOT
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.67
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
13
V/ns
EAS (2)
Single Pulse Avalanche Energy
480
mJ
–55 to 175
°C
Tstg
Tj
Storage Temperature
Operating Junction Temperature
( ●) Pulse width limi ted by safe operating area
(*) Current Limited by Package
May 2002
(1) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 12.5A, VDD = 50V
1/9
STD25NF10
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
nA
100
V
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 12.5 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.033
0.038
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Test Conditions
Forward Transconductance
VDS = 15 V, ID = 12.5 A
C iss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Min.
20
S
1550
pF
220
pF
95
pF
STD25NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
17
ns
Rise Time
VDD = 50V, ID = 12.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
60
ns
Qg
Total Gate Charge
VDD = 80V, ID =25A,V GS = 10V
55
nC
Qgs
Gate-Source Charge
12
nC
Q gd
Gate-Drain Charge
20
nC
tr
Turn-on Delay Time
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Condit ions
Min.
Typ.
Max.
60
15
VDD = 50V, ID = 12.5 A,
R G = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Source-drain Current (pulsed)
VSD (2)
Forward On Voltage
ISD = 25 A, V GS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Typ.
Source-drain Current
ISDM (1)
trr
Qrr
Min.
160
Max.
Unit
25
A
100
A
1.5
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
STD25NF10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD25NF10
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STD25NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD25NF10
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
7/9
STD25NF10
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
DIM.
A0
B0
B1
D
mm
MIN.
MAX.
MIN.
6.8
10.4
7
10.6
0.267 0.275
0.409 0.417
1.5
12.1
1.6
0.476
0.059 0.063
MAX.
D1
1.5
E
1.65
1.85
0.065 0.073
F
K0
7.4
2.55
7.6
2.75
0.291 0.299
0.100 0.108
P0
P1
3.9
7.9
4.1
8.1
0.153 0.161
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
* on sales type
8/9
inch
0.059
1.574
16.3
0.618
0.641
MIN.
330
MAX.
A
B
1.5
C
D
12.8
20.2
13.2
0.504 0.520
0.795
G
16.4
18.4
0.645 0.724
N
50
T
TAPE MECHANICAL DATA
MAX.
inch
BASE QTY
2500
12.992
0.059
1.968
22.4
0.881
BULK QTY
2500
STD25NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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