STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L ■ ■ VDSS RDS(on) ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS ■ DC MOTOR CONTROL ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 15 V Gate- source Voltage ID Drain Current (continuos) at TC = 25°C 10 A ID Drain Current (continuos) at TC = 100°C 7 A Drain Current (pulsed) 40 A Total Dissipation at TC = 25°C 30 W IDM (l) PTOT Derating Factor 0.2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 30 V/ns EAS (2) Single Pulse Avalanche Energy 50 mJ – 55 to 175 °C Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area (1) I SD ≤10A, di/dt ≤400A/µs, VDD =48V, Tj ≤ TJMAX. (2) Starting T j = 25°C, I d = 7A, V DD=20 V November 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 STD10NF06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl 5 °C/W Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 60 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 15V ±100 nA Max. Unit ON (1) Symbol Parameter VGS(th) Gate Threshold Voltage RDS(on) Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA Min. Typ. 1 V VGS = 10V, ID = 5 A 0.1 0.12 Ω VGS = 5 V, ID = 5 A 0.12 0.14 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/7 Parameter Test Conditions Forward Transconductance VDS =15 V , ID =10A VDS = 25V, f = 1 MHz, VGS = 0 Min. 6 S 346 pF Ciss Input Capacitance Coss Output Capacitance 54 pF Crss Reverse Transfer Capacitance 22 pF STD10NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 30V, ID = 5A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 48V, ID = 10A, VGS = 5V Typ. Max. Unit 10 ns 50 ns 6 3 2.5 8 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 30V, ID = 5A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 5) 20 10 ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 10A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. 30 50 3 Max. Unit 10 A 40 A 1.3 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 STD10NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STD10NF06L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 5/7 STD10NF06L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 0.063 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 6/7 inch 0.641 inch MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 1000 1000 STD10NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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