STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 ■ ■ ■ ■ ■ V DSS 600 600 600 600 V V V V R DS(on) ID Pw <1Ω <1Ω <1Ω <1Ω 8A 8 A(*) 5A 5A 100 W 30 W 96 W 96 W TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 TO-220 2 TO-220FP 3 3 2 1 DPAK TO-252 DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. 1 1 IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP8NM60 P8NM60 TO-220 TUBE STP8NM60FP P8NM60FP TO-220FP TUBE STD5NM60T4 D5NM60 DPAK TAPE & REEL STD5NM60-1 D5NM60 IPAK TUBE September 2002 1/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP8NM60 VDS VDGR VGS ID ID Unit STD5NM60 STD5NM60-1 STP8NM60FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C 8 8 (*) 5 A Drain Current (continuous) at TC = 100°C 5 5 (*) 3.1 A IDM (l ) Drain Current (pulsed) 32 32 (*) 20 A PTOT Total Dissipation at TC = 25°C 100 30 96 W Derating Factor 0.8 0.24 0.4 W/°C Peak Diode Recovery voltage slope 15 15 15 V/ns - 2500 - V dv/dt (1) VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature °C °C -55 to 150 -55 to 150 ( l ) Pulse width limi ted by safe operating area (1) ISD ≤5A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 TO-220FP DPAK IPAK 4.16 1.3 Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl 1.25 °C/W Rthj-case AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5 A V(BR)DSS 2/13 Min. Typ. Max. 600 3 Unit V 1 10 µA µA ±100 nA 4 5 V 0.9 1 Ω STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs (1) C iss Coss Crss C oss eq. (2) RG Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS = ID(on) x RDS(on)max, ID = 2.5A 2.4 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 440 100 10 pF pF pF Equivalent Output Capacitance VGS = 0V, V DS = 0V to 480V 50 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 4 Ω SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 14 10 ns ns Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, I D = 5 A, VGS = 10V 13 5 6 18 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Condition s td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, I D = 2.5 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 5 A, R G = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. ns ns ns ns ns 7 10 17 SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 300 1950 13 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 445 3005 13.5 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 8 32 A A 1.5 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For DPAK/IPAK 4/13 Thermal Impedance For DPAK/IPAK STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics 6/13 Normalized On Resistance vs Temperature STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/13 L4 P011C STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. inch MAX. MIN. 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 A 4.4 B D TYP TYP. MAX. F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L5 L2 L4 9/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 0.260 E 6.4 6.6 0.252 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/13 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A TAPE MECHANICAL DATA DIM. mm inch MIN. 6.8 MAX. MIN. MAX. 7 0.267 0.275 B0 B1 10.4 10.6 12.1 0.409 0.417 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 E F 1.65 7.4 1.85 7.6 0.065 0.073 0.291 0.299 K0 P0 2.55 3.9 2.75 4.1 0.100 0.108 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 A0 * on sales type 12/13 0.059 1.574 16.3 0.618 0.641 B C 1.5 12.8 D 20.2 G 16.4 N T 50 MAX. 330 13.2 inch MIN. MAX. 12.992 0.059 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 13/13