STMICROELECTRONICS STP22NM60

STP22NM60 - STF22NM60
STB22NM60 - STB22NM60-1 - STW22NM60
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
STP22NM60
STF22NM60
STB22NM60
STB22NM60-1
STW22NM60
■
■
■
■
■
VDSS
RDS(on)
600
600
600
600
600
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
V
V
V
V
V
Rds(on)*Qg
7.6
7.6
7.6
7.6
7.6
Ω*nC
Ω*nC
Ω*nC
Ω*nC
Ω*nC
ID
22
22
22
22
22
A
A
A
A
A
TYPICAL RDS(on) = 0.19Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
This improved version of MDmesh™ which is based
on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product
exhibits even lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip technique
yields overall performances that are significantly better
than that of similar competition’s products.
3
3
1
2
1
TO-220
2
TO-220FP
3
2
1
TO-247
3
3
12
I2PAK
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP22NM60
P22NM60
TO-220
TUBE
STF22NM60
F22NM60
TO-220FP
TUBE
STB22NM60
B22NM60T4
D²PAK
TAPE & REEL
STB22NM60-1
B22NM60-1
I²PAK
TUBE
STW22NM60
W22NM60
TO-247
TUBE
June 2003
1/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP22NM60
STB22NM60/1
VDS
VDGR
VGS
Unit
STF22NM60
STW22NM60
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
22
22 (*)
22
A
ID
Drain Current (continuous) at TC = 100°C
12.6
12.6 (*)
12.6
A
Drain Current (pulsed)
80
80(*)
80
A
Total Dissipation at TC = 25°C
192
45
210
W
Derating Factor
1.2
0.36
1.2
W/°C
IDM ()
PTOT
dv/dt(1)
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
15
--
2500
--
V
–65 to 150
°C
150
°C
Max. Operating Junction Temperature
() Pulse width limited by safe operating area;
(1) ISD ≤22A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
V/ns
(*)Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
Rthj-amb
Thermal Resistance Junction-ambient
Max
Tl
TO-220/D2PAK/I2PAK/TO-247
TO-220FP
0.65
2.8
Maximum Lead Temperature For Soldering
Purpose
°C/W
62.5
°C/W
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
11
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 11 A
V(BR)DSS
2/11
Min.
Typ.
Max.
600
3
Unit
V
1
10
µA
µA
±100
nA
4
5
V
0.19
0.25
Ω
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ELECTRICAL CHARACTERISTICS (CONTINUE)
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (2)
Rg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max,
ID = 11 A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
TBD
S
1590
803
52
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
130
pF
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 200 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
25
20
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 22 A,
VGS = 10 V
40
11
25
71
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 480 V, ID = 22 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
13
ns
15
ns
26
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
1.5
V
ISD
Parameter
Test Conditions
Min.
Typ.
Forward On Voltage
ISD = 22 A, VGS = 0
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
416
5.6
27
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
544
7.3
28
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
F
F1
L7
L2
6/11
L5
1 2 3
L4
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
7/11
1
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
9/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
3.70
4.30
0.14
18.50
øP
3.55
3.65
0.140
4.50
5.50
0.177
5.50
0.582
0.17
0.728
øR
S
0.620
0.214
L1
L2
10/11
TYP
0.143
0.216
0.216
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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11/11