2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 !Features 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18µs at IC = 5A) 3) Wide SOA. (safe operating area) !External dimensions (Units : mm) 4.5 10.0 Parameter Symbol Limits Unit Collector-base voltage VCBO 250 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 12 V IC Collector current PC Collector power dissipation 2 W W(Tc=25°C) °C °C Tj Tstg −55 ∼ +150 8.0 1.3 0.8 2.54 0.75 (1) (2) (3) A A(t=100ms) Storage temperature 2.8 (1) (2) (3) 7 Junction temperature 1.2 2.54 15 25 150 14.0 !Absolute maximum ratings (Ta = 25°C) 5.0 15.0 12.0 φ 3.2 ROHM : TO-220FN !Packaging specifications and hFE Type 2SC5575 Package TO-220FN hFE E Code − Basic ordering unit (pieces) 500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit VCEX(SUS) 125 − − V Collector cutoff current ICBO − − 10 µA VCB=100V Collector cutoff current IEBO − − 10 µA VEB=12V Collector-emitter saturation voltage VCE(sat) − − 0.6 V Base-emitter saturation voltage VBE(sat) − − 1.2 V IC/IB=5A/0.5A hFE 100 − 200 − VCE/IC=5V/3A Transition frequency fT − 20 − MHz Output capacitance Cob − 150 − pF VCB=10V,IE=0A , f=1MHz Turn-on time ton − − 0.5 µs IC=5A,RL=10Ω Storage time tstg − − 2.5 µs IB1=−IB2=0.5A tf − − 0.5 µs VCC 50V ICEO − − 2 mA VCE=100V,Ta=125°C Collector-emitter breakdown voltage DC current transfer ratio Fall time Collector cutoff current Conditions ICP=8A,IB1=−IB2=0.5A,IC=5A,L=200µH clamped IC/IB=5A/0.5A VCE=10V,IE=−0.5A 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)