ETC 2N5460/D

ON Semiconductor
2N5460
2N5461
2N5462
2 DRAIN
JFET Amplifiers
P–Channel — Depletion
3
GATE
1 SOURCE
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Gate Voltage
Rating
VDG
40
Vdc
Reverse Gate–Source Voltage
VGSR
40
Vdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Junction Temperature Range
TJ
–65 to +135
°C
Storage Channel Temperature Range
Tstg
–65 to +150
°C
1
2
3
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
40
—
—
Vdc
2N5460, 2N5461, 2N5462
—
—
5.0
nAdc
2N5460, 2N5461, 2N5462
—
—
1.0
µAdc
0.75
1.0
1.8
—
—
—
6.0
7.5
9.0
Vdc
0.5
0.8
1.5
—
—
—
4.0
4.5
6.0
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 µAdc)
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
(VDS = 15 Vdc, ID = 0.2 mAdc)
(VDS = 15 Vdc, ID = 0.4 mAdc)
2N5460, 2N5461, 2N5462
IGSS
2N5460
2N5461
2N5462
VGS(off)
VGS
2N5460
2N5461
2N5462
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
IDSS
–1.0
–2.0
–4.0
—
—
—
–5.0
–9.0
–16
mAdc
2N5460
2N5461
2N5462
yfs
1000
1500
2000
—
—
—
4000
5000
6000
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
—
—
75
mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.0
2.0
pF
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
NF
—
1.0
2.5
dB
Equivalent Short–Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
en
—
60
115
nV Hz
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
FUNCTIONAL CHARACTERISTICS
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
1
Publication Order Number:
2N5460/D
2N5460 2N5461 2N5462
4.0
VDS = 15 V
3.5
I D, DRAIN CURRENT (mA)
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
3.0
2.5
TA = -55°C
2.0
25°C
1.5
125°C
1.0
0.5
0
0
0.2
0.4 0.6 0.8
1.0
1.2 1.4
1.6
VGS, GATE-SOURCE VOLTAGE (VOLTS)
1.8
2.0
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
4000
3000
2000
1000
700
500
VDS = 15 V
f = 1.0 kHz
300
200
0.2
0.3
10
I D, DRAIN CURRENT (mA)
VDS = 15 V
8.0
7.0
TA = -55°C
6.0
25°C
125°C
5.0
4.0
3.0
2.0
1.0
0
0.5
1.5
2.0
2.5
3.0
1.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
3.5
4.0
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
12
TA = -55°C
10
8.0
25°C
125°C
6.0
4.0
2.0
0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
2.0
3.0
ID, DRAIN CURRENT (mA)
5.0
7.0
10000
VDS = 15 V
14
1.0
Figure 5. VGS(off) = 4.0 Volts
7.0
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
16
I D, DRAIN CURRENT (mA)
4.0
7000
Figure 2. VGS(off) = 4.0 Volts
0
3.0
10000
9.0
0
2.0
Figure 4. VGS(off) = 2.0 Volts
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
Figure 1. VGS(off) = 2.0 Volts
0.5
0.7
1.0
ID, DRAIN CURRENT (mA)
8.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
1.0
2.0
3.0
ID, DRAIN CURRENT (mA)
5.0
Figure 6. VGS(off) = 5.0 Volts
Figure 3. VGS(off) = 5.0 Volts
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2
7.0
10
2N5460 2N5461 2N5462
10
VDS = 15 V
f = 1.0 kHz
8.0
300
200
IDSS = 3.0 mA
100
70
50
6.0 mA
10 mA
30
7.0
6.0
Ciss
5.0
4.0
3.0
2.0
20
10
0.1
f = 1.0 MHz
VGS = 0
9.0
C, CAPACITANCE (pF)
r oss , OUTPUT RESISTANCE (k ohms)
1000
700
500
Coss
1.0
0.5
1.0
2.0
ID, DRAIN CURRENT (mA)
0.2
5.0
0
10
Crss
0
Figure 7. Output Resistance
versus Drain Current
40
Figure 8. Capacitance versus
Drain–Source Voltage
5.0
10
VDS = 15 V
VGS = 0
RG = 1.0 Megohm
4.0
3.0
2.0
9.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
1.0
VDS = 15 V
VGS = 0
f = 100 Hz
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10
20 30 50
100 200 300 500 1000 2000 3000
f, FREQUENCY (Hz)
0
1.0
10,000
Figure 9. Noise Figure versus Frequency
vi
10
100
1000
RS, SOURCE RESISTANCE (k Ohms)
Figure 10. Noise Figure versus
Source Resistance
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
Crss
Ciss
10,000
ross
Coss
| yfs | vi
yis = jω Ciss
yos = jω Cosp * + 1/ross
yfs = yfs |
yrs = -jω Crss
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
Figure 11. Equivalent Low Frequency Circuit
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3
2N5460 2N5461 2N5462
PACKAGE DIMENSIONS
TO–92 (TO–226AA)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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2N5460/D