ON Semiconductor FET Transistor VN0610LL N–Channel — Enhancement MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1 MΩ) VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current Continuous Pulsed 1 2 mAdc ID 190 1000 IDM Total Power Dissipation @ TA = 25°C Derate above 25°C PD 400 3.2 mW mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RθJA 312.5 °C/W TL 300 °C Operating and Storage Temperature Range 3 CASE 29–11, STYLE 22 TO–92 (TO–226AA) 3 DRAIN THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds 2 GATE 1 SOURCE ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 — Vdc — — 10 500 OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µA) µAdc Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) IDSS Gate–Body Leakage Current, Forward (VGSF = 30 V, VDS = 0) IGSSF — –100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 2.5 Vdc Static Drain–Source On–Resistance (VGS = 10 V, ID = 500 mA) (VGS = 10 V, ID = 500 mA, TC = 125°C) rDS(on) — — 5.0 9.0 Drain–Source On–Voltage (VGS = 5.0 V, ID = 200 mA) (VGS = 10 V, ID = 500 mA) VDS(on) — — 1.5 2.5 ID(on) 750 — mAdc gfs 100 — µmhos ON CHARACTERISTICS(1) On–State Drain Current (VGS = 10 V, VDS ≥ 2.0 VDS(on)) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 500 mA) Ω Vdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 2 1 Publication Order Number: VN0610LL/D VN0610LL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit Ciss — 60 pF Coss — 25 Crss — 5.0 ton — 10 toff — 10 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS(1) Turn–On Delay Time Turn–Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 Ω, RL = 23 Ω) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 10%. http://onsemi.com 2 ns VN0610LL RESISTIVE SWITCHING +25 V Vin PULSE GENERATOR 50 Ω TO SAMPLING SCOPE 50 Ω INPUT Vout 20 dB 50 Ω ATTENUATOR 40 pF 50 Ω ton 125 Ω toff 90% 10% OUTPUT V INVERTED out 1.0 MΩ 90% 50% 10% INPUT Vin (Vin Amplititude 10 Volts) Figure 2. Switching Waveforms Figure 1. Switching Test Circuit 2.0 VDS = VGS ID = 1.0 mA 1.6 I D(on) , DRAIN CURRENT (AMPS) VGS(th), THRESHOLD VOLTAGE 2.0 1.2 0.8 0.4 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (°C) VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 5.0 V 0.4 4.0 V 150 0 Figure 3. VGS(th) Normalized versus Temperature 2.0 9.0 V 7.0 V 0.8 6.0 V 0.4 VGS = 0 V 80 8.0 V 1.2 60 40 Ciss 20 5.0 V Coss 4.0 V 0 20 10 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4.0 100 VGS = 10 V 1.6 1.0 2.0 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4. On–Region Characteristics C, CAPACITANCE (pF) I D(on) , DRAIN CURRENT (AMPS) PULSE WIDTH Crss 40 0 Figure 5. Output Characteristics 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain–To–Source Voltage http://onsemi.com 3 VN0610LL PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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