ETC BAV99LT1/D

BAV99LT1
Preferred Device
Dual Series
Switching Diode
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current
(Note 1.)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non–Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
IFSM
Peak Forward Surge Current
http://onsemi.com
ANODE
1
3
CATHODE/ANODE
A
MARKING DIAGRAM
3
2.0
1.0
0.5
1
A7 M
2
THERMAL CHARACTERISTICS
Characteristic
CATHODE
2
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
Total Device Dissipation
FR–5 Board (Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
RJA
CASE 318
SOT–23
STYLE 11
A7 = Device Code
M = Date Code
ORDERING INFORMATION
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
RJA
417
Junction and Storage
Temperature Range
TJ, Tstg
–65 to
+150
Device
Package
Shipping
BAV99LT1
SOT–23
3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
°C
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
–
Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
–
–
–
2.5
30
50
Adc
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
–
1.5
pF
Forward Voltage
VF
–
–
–
–
715
855
1000
1250
mVdc
trr
–
6.0
ns
VFR
–
1.75
V
Reverse Breakdown Voltage (I(BR) = 100 µA)
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
 Semiconductor Components Industries, LLC, 2000
September, 2000 – Rev. 1
1
Publication Order Number:
BAV99LT1/D
BAV99LT1
820 Ω
+10 V
2k
100 µH
0.1 µF
IF
tr
tp
IF
t
trr
10%
0.1 µF
DUT
50 Ω OUTPUT
PULSE
GENERATOR
90%
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH DIODE
10
100
I R, REVERSE CURRENT (A)
µ
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
0.1
0.2
0.4
0.6
0.8
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 125°C
1.0
TA = 25°C
10
0
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
http://onsemi.com
2
8
40
50
BAV99LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
3
BAV99LT1
PACKAGE DIMENSIONS
SOT–23
(TO–236AB)
PLASTIC PACKAGE
CASE 318–09
ISSUE AF
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
4
BAV99LT1/D