PD-94400 RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) IRHSLNA57Z60 30V, N-CHANNEL Product Summary Part Number RDS(on) IRHSLNA57Z60 4.0mΩ QG 200nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57Z60 for Lower RDS(on) Absolute Maximum Ratings Parameter ID@ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain or Source Current Continuous Drain or Source Current Pulse Drain Current ➀ Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage VDS Drain-to-Source Voltage IF(AV)@VGS =12V, TC =25°C Schottky and Body Diode Avg. Forward Current IF(AV)@VGS =12V, TC =100°C Schottky and Body Diode Avg. Forward Current TJ, TSTG Operating Junction and Storage Temperature Range Package Mounting Surface Temperature Weight Units 75* 75* 300 250 2.0 +20 30 75* 75* -55 to 150 300 (for 10sec) 3.3 (Typical) A W W/°C V A °C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 03/15/02 IRHSLNA57Z60 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units 30 — — — — 2.0 45 — — — — — — — — — — — — — — — — — 100 — -100 — 200 — 55 — 40 — 35 — 160 — 78 — 26 6.6 — Test Conditions 4.0 V mΩ VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A 4.0 — 50 50 V S( ) µA mA nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 45A VDS = 24V, VGS=0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A, VDS = 15V ns VDD = 15V, ID = 45A, VGS =12V, RG = 2.35Ω Ω Parameter BVDSS RDS(on) nA nH Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter VSD Min Typ Max Units Diode Forward Voltage — — — — — — trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time — 1.15 — 1.05 — 0.95 — 175 — 500 7.95 — V nS nC nH Test Conditions TJ = -55°C, ID=45A, VGS = 0V TJ = 25°C, ID= 45A, VGS = 0V TJ = 110°C, ID=45A, VGS = 0V Tj = 25°C, IF =45A, di/dt ≤ 100A/µs VDS ≤ 30V Measured from center of drain pad to center of source pad (for Schottky only) Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky) Min Typ Max — — — — 0.5 0.7 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRHSLNA57Z60 10000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 100 10 4.5V 20µs PULSE WIDTH T = 25 C ° J 1 0.1 1 10 4.5V 10 20µs PULSE WIDTH T = 150 C 100 ° J 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100 2.0 TJ = 150 ° C TJ = 25 ° C 10 V DS = 15V 20µs PULSE WIDTH 1 4.0 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRHSLNA57Z60 VGS , Gate-to-Source Voltage (V) 20 ID = 45A VDS = 24V VDS = 15V 16 12 8 4 0 0 50 100 150 200 250 300 QG , Total Gate Charge (nC) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD D.U.T. + V - DS VGS VG 3mA Charge IG ID Current Sampling Resistors Fig 5a. Basic Gate Charge Waveform 4 Fig 5b. Gate Charge Test Circuit www.irf.com IRHSLNA57Z60 200 RD VDS LIMITED BY PACKAGE I D , Drain Current (A) VGS D.U.T. 150 RG 100 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % + - VDD 12V Fig 7a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 6. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 7b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET www.irf.com 5 IRHSLNA57Z60 EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 33.5A 47.4A BOTTOM 75A TOP 1200 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 9. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS 15V tp L VD S D.U .T. RG IA S 12V 20V tp DR IV E R + V - DD 0.01 Ω Fig 9a. Unclamped Inductive Test Circuit 6 A IAS Fig 9b. Unclamped Inductive Waveforms www.irf.com IRHSLNA57Z60 MOSFET Body Diode & Schottky Diode Characteristics Instantaneous Forward Current - I S (A) 100 10 Tj = 110°C Tj = 25°C Tj = -55°C 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V) Fig. 10 - Typical Forward Voltage Drop Characterstics Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky www.irf.com 7 IRHSLNA57Z60 Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature ➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ 50% Duty Cycle, Rectangular Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/02 8 www.irf.com