Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm ■ Absolute Maximum Ratings TC = 25°C VDSS 230 V Gate-source surrender voltage VGSS ±30 V Drain current ID 30 A Peak drain current IDP 120 A PD 50 W Ta = 25°C 0 to 0.3 (10.2) (8.9) Unit Drain-source surrender voltage Power dissipation 2.5±0.2 2.54±0.3 1 2 3 (6.4) (1.4) Rating 1.4±0.1 0.8±0.1 (2.1) Symbol 0.6±0.1 3.0±0.5 0 to 0.5 • Low on-resistance, low Qg • High avalanche resistance 1.5±0.3 ■ Features Parameter 1.4±0.1 10.1±0.3 For PDP/For high-speed switching 4.6±0.2 (1.4) 10.5±0.3 1: Gate 2: Drain 3: Source TO-220C-G1 Package 3 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Internal Connection D G S ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 Diode forward voltage VDSF IDR = 30 A, VGS = 0 Gate threshold voltage Vth VDS = 25 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 Gate-source cutoff currentt IGSS VGS = ±30 V, VDS = 0 Drain-source on resistance RDS(on) VGS = 10 V, ID = 15 A Forward transfer admittance Yfs VDS = 25 V, ID = 15 A Min Typ Max 230 V −1.5 2 55 V 4 V 100 µA ±1 µA 74 mΩ 19 S 2 330 pF Coss 356 pF Reverse transfer capacitance (Common-source) Crss 44 pF Turn-on delay time td(on) VDD ≈ 100 V, ID = 15 A 39 ns tr RL ≈ 6.7 Ω, VGS = 10 V Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Rise time Turn-off delay time VDS = 25 V, VGS = 0, f = 1 MHz td(off) 8 Unit 37 ns 221 ns Fall time tf 46 ns Reverse recovery time trr L = 230 µH, VDD = 100 V 164 ns Reverse recovery charge Qrr IDR = 15 A, di /dt = 100 A/ µs 853 nC Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2004 SJG00033AED 1 2SK3560 ■ Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Symbol Conditions Qg VDD = 100 V, ID = 25 A Gate-source charge Qgs VGS = 10 V Gate-drain charge Qgd Total gate charge Min Typ Max Unit 51.2 nC 8.2 nC 19.4 nC Channel-case heat resistance Rth(ch-c) 2.5 °C/W Channel-atmosphere heat resistance Rth(ch-a) 89.2 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. PC Ta Safe operation area 103 IDP Drain current ID (A) ID t = 100 µs 10 1 ms 1 10 ms (1) TC = Ta (2) Without heat sink 80 60 (1) 40 20 (2) 1 10 102 Drain-source voltage VDS (V) 2 Collector power dissipation PC (W) Non repetitive pulse TC = 25°C 102 10−1 100 103 0 0 50 100 Ambient temperature Ta (°C) SJG00033AED 150 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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