MOTOROLA MGW30N60

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by MGW30N60/D
SEMICONDUCTOR TECHNICAL DATA
 Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
IGBT IN TO–247
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 60 J per Amp typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Robust High Voltage Termination
• Robust RBSOA
C
G
G
C
E
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGE
±20
Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
50
30
100
Adc
PD
202
1.61
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
s
RθJC
RθJA
0.62
45
°C/W
TL
260
°C
Rating
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
TMOS
 Motorola
Motorola, Inc.
1995
Power MOSFET Transistor Device Data
1
MGW30N60
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
—
—
870
—
—
mV/°C
25
—
—
Vdc
—
—
—
—
100
2500
—
—
250
—
—
—
2.20
2.10
2.60
2.90
—
3.45
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
15
—
Mhos
pF
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
BVCES
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
µAdc
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 15 Adc)
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 30 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
Cies
—
4280
—
Coes
—
275
—
Cres
—
19
—
td(on)
—
76
—
tr
—
80
—
td(off)
—
348
—
tf
—
188
—
Eoff
—
0.98
1.28
mJ
td(on)
—
73
—
ns
tr
—
95
—
td(off)
—
394
—
tf
—
418
—
Eoff
—
1.90
—
mJ
QT
—
150
—
nC
Q1
—
30
—
Q2
—
45
—
—
13
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc, IC = 30 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc, IC = 30 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 30 Adc,
VGE = 15 Vdc)
ns
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
LE
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGW30N60
TYPICAL ELECTRICAL CHARACTERISTICS
60
60
TJ = 125°C
IC, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
10 V
15 V
40
20
0
1
0
60
IC, COLLECTOR CURRENT (AMPS)
VGE = 20 V
3
2
4
25°C
6
7
8
9
10
11
4
3
5
3
VGE = 15 V
80 µs PULSE WIDTH
IC = 30 A
2.6
22.5 A
15 A
2.2
1.8
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ = 25°C
6400
VCE = 0 V
5600
C, CAPACITANCE (pF)
2
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
7200
Cies
4800
4000
3200
2400
1600
Coes
Cres
0
1
Figure 2. Output Characteristics, TJ = 125°C
20
0
0
Figure 1. Output Characteristics, TJ = 25°C
TJ = 125°C
800
20
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE = 100 V
5 µs PULSE WIDTH
5
10 V
15 V
40
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
40
0
12.5 V
VGE = 20 V
17.5 V
0
5
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
5
10
15
20
25
16
QT
12
8
Q1
Q2
TJ = 25°C
IC = 30 A
4
0
0
20
40
60
80
100
120
140
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
MGW30N60
3
VCC = 360 V
VGE = 15 V
TJ = 125°C
2.5
TURN–OFF ENERGY LOSSES (mJ)
TURN–OFF ENERGY LOSSES (mJ)
3
IC = 30 A
2
1.5
20 A
1
10 A
0.5
0
10
20
30
40
1
20 A
0.5
10 A
0
0
50
25
75
100
125
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
IC, COLLECTOR–TO–EMITTER CURRENT (A)
TURN–OFF ENERGY LOSSES (mJ)
4
IC = 30 A
TJ, JUNCTION TEMPERATURE (°C)
VCC = 360 V
VGE = 15 V
RG = 20 Ω
TJ = 125°C
0.8
0.4
0
1.5
RG, GATE RESISTANCE (OHMS)
1.2
0
2
50
2
1.6
VCC = 360 V
VGE = 15 V
RG = 20 Ω
2.5
5
10
15
20
25
30
150
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
1000
Motorola TMOS Power MOSFET Transistor Device Data
MGW30N60
PACKAGE DIMENSIONS
0.25 (0.010)
M
–T–
–Q–
T B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
–B–
C
4
U
A
R
1
K
L
2
3
–Y–
P
F
H
V
J
D
0.25 (0.010)
M
Y Q
S
G
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
20.40
20.90
15.44
15.95
4.70
5.21
1.09
1.30
1.50
1.63
1.80
2.18
5.45 BSC
2.56
2.87
0.48
0.68
15.57
16.08
7.26
7.50
3.10
3.38
3.50
3.70
3.30
3.80
5.30 BSC
3.05
3.40
STYLE 4:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.803
0.823
0.608
0.628
0.185
0.205
0.043
0.051
0.059
0.064
0.071
0.086
0.215 BSC
0.101
0.113
0.019
0.027
0.613
0.633
0.286
0.295
0.122
0.133
0.138
0.145
0.130
0.150
0.209 BSC
0.120
0.134
GATE
COLLECTOR
EMITTER
COLLECTOR
CASE 340F–03
TO–247AE
ISSUE E
Motorola TMOS Power MOSFET Transistor Device Data
5
MGW30N60
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6
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*MGW30N60/D*
MGW30N60/D
Motorola TMOS Power MOSFET Transistor Device
Data