Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA ! 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability C G G C Rge E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc VGE CLAMPED Vdc IC 20 Adc ICR 12 Apk PD 150 Watts ESD 3.5 kV TJ, Tstg – 55 to 175 °C RqJC RqJA 1.0 62.5 °C/W TL 275 °C Rating Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width t 100 ms Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds 10 lbfin (1.13 Nm) Mounting Torque, 6–32 or M3 screw UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C EAS mJ 550 150 SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. TMOS Motorola Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGP20N35CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 320 350 380 — — — — 1.0 200 Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (IClamp = 10 mA, TJ = –40 to 150°C) BVCES Zero Gate Voltage Collector Current (VCE = 250 V, VGE = 0 V, TJ = 125°C) (VCE = 15 V, VGE = 0 V, TJ = 125°C) ICES Resistance Gate–Emitter (TJ = –40 to 150°C) RGE 10k 16k 30k Gate–Emitter Breakdown Voltage (IG = 2 mA) BVGES 11 13 15 "V ICES — 8 100 mA BVCER 26 40 120 V 1.0 0.75 1.7 — 2.4 1.8 — — — 1.1 1.4 1.4 1.4 1.9 1.8 gfs 10 16 — S pF Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = –40 to 150°C) Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA) Vdc mA mA W ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) (VCE = VGE, IC = 1 mA, TJ = 150°C) VGE(th) Collector–Emitter On–Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150°C) VCE(on) Forward Transconductance (VCE u 50 V, IC = 10 A) V V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance Ciss — 2800 — Coss — 200 — Crss — 25 — SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate–Emitter Charge Qg — 45 80 Qgs — 8.0 — Qgd — 20 — (VCC = 320 V, IC = 20 A, L = 200 mH, RG = 1 KW) td(off) — TBD TBD tf — TBD TBD (VCC = 14 V, IC = 20 A, L = 200 mH, RG = 1 KW) td(on) — TBD TBD tr — TBD TBD (VCC = 280 V, IC = 20 A, VGE = 5 V) Gate–Collector Charge Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time nC µs µs (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL TYPICAL ELECTRICAL CHARACTERISTICS 40 VGE = 10 V I C , COLLECTOR CURRENT (AMPS) TJ = 25°C 30 4V 20 10 3V 0 0 2 4 6 8 I C , COLLECTOR CURRENT (AMPS) 20 3V 10 0 1 2 3 4 5 6 8 7 9 10 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C VCE = 10 V 30 20 TJ = 125°C 25°C 10 1 2 3 4 5 2.2 VGE = 5 V 2.0 IC = 20 A 1.8 15 A 1.6 10 A 1.4 1.2 1.0 –50 0 50 150 100 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 10000 1000 VCE = 0 V TJ = 25°C Ciss VCE = 0 V 1000 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 4V VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 40 0 TJ = 125°C 5V 30 0 10 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (AMPS) 40 5V VGE = 10 V Coss 100 Crss 10 TJ = 25°C Ciss 100 10 Coss Crss 1.0 0 25 50 75 100 125 150 175 200 1.0 10 100 1000 COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. Capacitance Variation Figure 6. High Voltage Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 3 Qg 6 Qgs Qgd 4 2 10 20 30 0 2000 1000 10 3000 4000 Figure 8. Total Switching Losses versus Gate Temperature 5 Eoff 30 Td(off) 20 3 VDD = 320 V VGE = 5 V TJ = 25°C IC = 20 A TF 10 2000 1000 3000 4000 2 1 0 5000 6 26 VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH IC = 20 A 24 22 Td(off) 20 Eoff 18 16 14 TF 12 25 75 50 100 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (°C) Figure 9. Total Switching Losses versus Gate Resistance Figure 10. Total Switching Losses versus Case Temperature Eoff 15 Td(off) 15 10 10 SWITCHING TIME ( m S) 20 4 125 20 25 VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH TJ = 125°C 0 5000 SWITCHING TIME ( m S) 4 20 TF 10 Figure 7. Gate–to–Emitter and Collector–to–Emitter Voltage vs Total Charge SWITCHING TIME ( m S) TOTAL SWITCHING ENERGY LOSSES (mJ) 20 RG, GATE RESISTANCE (OHMS) 25 TOTAL SWITCHING ENERGY LOSSES (mJ) 20 Qg, TOTAL GATE CHARGE (nC) 40 40 30 0 6 0 Td(off) 30 40 50 0 50 Eoff 40 TOTAL SWITCHING ENERGY LOSSES (mJ) 0 60 VDD = 320 V VGE = 5 V TJ = 125°C IC = 20 A 50 LATCH CURRENT (AMPS) 0 TJ = 25°C IC = 20 A 60 SWITCHING TIME ( m S) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 8 TOTAL SWITCHING ENERGY LOSSES (mJ) MGP20N35CL 3 mH 16 12 10 mH 8.0 4.0 TF 5 4 5 10 15 5 20 0 0 25 50 75 100 125 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) TEMPERATURE (°C) Figure 11. Total Switching Losses versus Collector Current Figure 12. Latch Current versus Temperature Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E – 05 1.0E – 04 1.0E – 03 1.0E – 02 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E – 01 1.0E+00 1.0E+01 t, TIME (s) Figure 13. Thermal Response PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–06 (TO–220AB) ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 5 MGP20N35CL Motorola reserves the right to make changes without further notice to any products herein. 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