MOTOROLA MGP21N60E

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by MGP21N60E/D
SEMICONDUCTOR TECHNICAL DATA
 N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an Energy–efficient,
ESD protected, and short circuit rugged device.
•
•
•
•
•
•
IGBT IN TO–220
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
Industry Standard TO–220 Package
High Speed: Eoff = 65 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
Low On–Voltage 2.15 V typical at 20 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
C
G
C
G
E
CASE 221A–06
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGE
±20
Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
31
21
42
Adc
PD
140
1.12
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJA
0.9
65
°C/W
TL
260
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MGP21N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
—
—
870
—
—
mV/°C
15
—
—
Vdc
—
—
—
—
10
200
—
—
50
—
—
—
1.6
1.5
2.2
2.0
—
2.5
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
8.6
—
Mhos
pF
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
BVCES
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
µAdc
mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Cies
—
1605
—
Coes
—
146
—
Cres
—
23
—
td(on)
—
29
—
tr
—
60
—
td(off)
—
238
—
tf
—
140
—
Eoff
—
0.8
—
mJ
td(on)
—
28
—
ns
tr
—
62
—
td(off)
—
338
—
tf
—
220
—
Eoff
—
1.3
—
mJ
QT
—
86
—
nC
Q1
—
18
—
Q2
—
39
—
—
7.5
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc,
Vd IC = 20 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
H,
RG = 20 Ω, TJ = 25
25°C)
C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc,
Vd IC = 20 Ad
Adc,
Vd L = 300 mH
VGE = 15 Vdc,
H,
RG = 20 Ω, TJ = 125°C)
125 C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc,
Vdc IC = 20 Adc
Adc,
VGE = 15 Vdc)
ns
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
LE
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGP21N60E
60
60
17.5 V
20 V
12.5 V
40
VGE = 10 V
20
0
4.0
20 V
12.5 V
40
VGE = 10 V
20
6.0
8.0
Figure 2. Output Characteristics, TJ = 125°C
20
TJ = 125°C
10
25°C
0
7.0
5.0
9.0
11
15
13
17
2.3
IC = 20 A
2.1
15 A
1.9
1.7
10 A
VGE = 15 V
80 ms PULSE WIDTH
1.5
–50
0
–25
25
50
75
100
125
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
4000
TJ = 25°C
VGE = 0
3200
2400
Cies
Coes
1600
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
30
Cres
0
0
6.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
40
800
4.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE = 100 V
50
2.0
0
60
IC , COLLECTOR CURRENT (AMPS)
15 V
0
2.0
0
C, CAPACITANCE (pF)
17.5 V
TJ = 125°C
15 V
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
TJ = 25°C
5.0
10
15
20
25
20
QT
16
12
Q1
Q2
8.0
TJ = 25°C
VCC = 300 V
IC = 20 A
4.0
0
0
25
50
75
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
150
125
3
MGP21N60E
IC = 20 A
1.3
TURN–OFF ENERGY LOSSES (mJ)
TURN–OFF ENERGY LOSSES (mJ)
1.5
TJ = 125°C
VDD = 360 V
VGE = 15 V
1.1
IC = 15 A
0.9
0.7
IC = 10 A
0.5
15
25
35
1.2
IC = 15 A
IC = 10 A
0.8
0.4
45
–50
50
75
100
Figure 8. Turn–Off Losses versus
Junction Temperature
0.8
0.6
0.4
0.2
0
0
25
Figure 7. Turn–Off Losses versus
Gate Resistance
5.0
10
15
20
IC , COLLECTOR–TO–EMITTER CURRENT (AMPS)
1.0
0
TJ, JUNCTION TEMPERATURE (°C)
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
1.2
–25
RG, GATE RESISTANCE (OHMS)
1.4
TURN–OFF ENERGY LOSSES (mJ)
IC = 20 A
0
5.0
4
VCC = 360 V
VGE = 15 V
RG = 20 W
1.6
125
150
100
10
TJ = 125°C
RGE = 20 W
VGE = 15 V
1.0
1.0
10
100
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
1000
Motorola TMOS Power MOSFET Transistor Device Data
MGP21N60E
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
TO–220AB
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
5
MGP21N60E
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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Mfax is a trademark of Motorola, Inc.
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6
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Motorola TMOS Power MOSFET TransistorMGP21N60E/D
Device Data