MOTOROLA MGP20N40CL

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by MGP20N40CL/D
SEMICONDUCTOR TECHNICAL DATA

20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

C
G
G
C
Rge
E
E
CASE 221A–06, Style 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCGR
CLAMPED
Vdc
VGE
CLAMPED
Vdc
IC
20
Adc
ICR
12
Apk
PD
150
Watts
ESD
3.5
kV
TJ, Tstg
– 55 to 175
°C
RqJC
RqJA
1.0
62.5
°C/W
TL
275
°C
Gate–Emitter Voltage
Collector Current — Continuous @ TC = 25°C
Reversed Collector Current – pulse width
t 100 ms
Total Power Dissipation @ TC = 25°C (TO–220)
Electrostatic Voltage — Gate–Emitter
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
10 lbfin (1.13 Nm)
Mounting Torque, 6–32 or M3 screw
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
mJ
550
150
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MGP20N40CL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
370
405
430
—
—
—
—
500
100
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(IClamp = 10 mA, TJ = –40 to 150°C)
BVCES
Zero Gate Voltage Collector Current
(VCE = 350 V, VGE = 0 V, TJ = 150°C)
(VCE = 15 V, VGE = 0 V, TJ = 150°C)
ICES
Resistance Gate–Emitter (TJ = –40 to 150°C)
RGE
10k
16k
30k
Gate–Emitter Breakdown Voltage (IG = 2 mA)
BVGES
11
13
15
"V
ICES
—
—
50
mA
BVCER
26
40
120
V
1.0
0.75
1.7
—
2.2
1.8
—
—
—
1.1
1.4
1.4
1.4
1.9
1.8
gfs
10
18
—
S
pF
Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = 150°C)
Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA)
Vdc
mA
W
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150°C)
VGE(th)
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150°C)
VCE(on)
Forward Transconductance (VCE
u 5.0 V, IC = 10 A)
V
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Ciss
—
2800
—
Coss
—
200
—
Crss
—
25
—
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
Gate–Emitter Charge
Qg
—
45
80
Qgs
—
8.0
—
Qgd
—
20
—
( CC = 320 V,, IC = 20 A,,
(V
L = 200 mH, RG = 1 KW)
td(off)
—
14
—
tf
—
4.0
—
((VCC = 14 V,, IC = 20 A,,
L = 200 mH, RG = 1 KW)
td(on)
—
2.0
—
tr
—
6.0
—
(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)
Gate–Collector Charge
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
nC
µs
µs
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N40CL
TYPICAL ELECTRICAL CHARACTERISTICS
40
VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)
TJ = 25°C
30
4V
20
10
3V
0
0
2
4
6
8
I C , COLLECTOR CURRENT (AMPS)
20
3V
10
0
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
Figure 2. Output Characteristics, TJ = 125°C
VCE = 10 V
30
20
TJ = 125°C
25°C
10
1
4V
0
40
0
TJ = 125°C
5V
30
10
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (AMPS)
40
5V
VGE = 10 V
2
3
4
5
10
2.2
VGE = 5 V
2.0
IC = 20 A
1.8
15 A
1.6
10 A
1.4
1.2
1.0
–50
50
0
100
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
150
10000
TJ = 25°C
C, CAPACITANCE (pF)
VGE = 0 V
Ciss
1000
Coss
100
Crss
10
1.0
0
25
50
75
100
125
150
175
200
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Motorola TMOS Power MOSFET Transistor Device Data
3
Qg
6
Qgs
Qgd
4
2
20
10
30
20
20
TF
10
0
1000
2000
10
3000
4000
Figure 7. Total Switching Losses
versus Gate Temperature
30
Td(off)
20
3
VDD = 320 V
VGE = 5 V
TJ = 25°C
IC = 20 A
TF
10
1000
2000
3000
4000
2
1
0
5000
6
26
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
IC = 20 A
24
22
Td(off)
20
Eoff
18
16
14
TF
12
25
50
75
100
RG, GATE RESISTANCE (OHMS)
TC, CASE TEMPERATURE (°C)
Figure 8. Total Switching Losses
versus Gate Resistance
Figure 9. Total Switching Losses
versus Case Temperature
Eoff
15
Td(off)
10
15
10
SWITCHING TIME ( m S)
20
4
125
20
25
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
TJ = 125°C
0
5000
SWITCHING TIME ( m S)
4
SWITCHING TIME ( m S)
TOTAL SWITCHING ENERGY LOSSES (mJ)
30
0
5
40
30
Figure 6. Gate–to–Emitter and
Collector–to–Emitter Voltage vs Total Charge
Eoff
20
Td(off)
RG, GATE RESISTANCE (OHMS)
25
TOTAL SWITCHING ENERGY LOSSES (mJ)
40
40
6
0
50
Eoff
Qg, TOTAL GATE CHARGE (nC)
40
0
60
VDD = 320 V
VGE = 5 V
TJ = 125°C
IC = 20 A
50
TOTAL SWITCHING ENERGY LOSSES (mJ)
0
60
LATCH CURRENT (AMPS)
0
TJ = 25°C
IC = 20 A
50
3 mH
16
12
10 mH
8.0
4.0
TF
5
4
TOTAL SWITCHING ENERGY LOSSES (mJ)
8
SWITCHING TIME ( mS)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
MGP20N40CL
5
10
15
5
20
0
0
25
50
75
100
125
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TEMPERATURE (°C)
Figure 10. Total Switching Losses
versus Collector Current
Figure 11. Latch Current versus Temperature
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N40CL
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E – 05
1.0E – 04
1.0E – 03
1.0E – 02
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E – 01
1.0E+00
1.0E+01
t, TIME (s)
Figure 12. Thermal Response
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
STYLE 9:
PIN 1.
2.
3.
4.
U
H
K
Z
L
R
V
J
G
D
N
GATE
COLLECTOR
EMITTER
COLLECTOR
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
(TO–220AB)
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
5
MGP20N40CL
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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6
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MGP20N40CL/D
Motorola TMOS Power MOSFET Transistor
Device Data