MOTOROLA MGS05N60D

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by MGS05N60D/D
SEMICONDUCTOR TECHNICAL DATA
 N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
POWERLUX
IGBT
0.5 A @ 25°C
600 V
•
•
•
•
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (TO92 — 1.0 Watt)
High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/ms
• Robust High Voltage Termination
• Robust Turn–Off SOA
C
E
C
G
G
CASE 029–05
TO–226AE
TO92 (1.0 WATT)
E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGES
± 15
Vdc
IC25
IC90
ICM
0.5
0.3
2.0
Adc
PD
1.0
Watt
TJ, Tstg
– 55 to 150
°C
RθJC
RθJA
25
125
°C/W
TL
260
°C
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting @ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Power
 Motorola
Motorola, Inc.
1997
Products Division Technical Data
1
MGS05N60D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
600
—
680
0.7
—
—
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
BVCES
Vdc
V/°C
µAdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
ICES
ICES
—
—
0.1
5.0
5.0
50
Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)
IGES
—
10
100
—
—
1.6
1.5
2.0
—
3.5
—
—
6.0
6.0
—
mV/°C
gfe
0.3
0.42
—
Mhos
Cies
—
75
100
pF
Coes
—
11
20
Cres
—
1.6
5.0
—
—
—
—
5.0
5.2
2.3
2.3
6.0
—
3.0
—
—
150
—
—
35
—
28
—
mAdc
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 20 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)
VFEC
Reverse Recovery Time @ TC = 25°C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
trr
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
QRR
Vdc
ns
mC
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd
Vdc, L = 3
3.0
0 mH,
H RG = 25 Ω
Ω,
TC = 25
25°C,
C, dV/dt = 1000 V/ms)
Energy losses include “tail”
td(off)
—
ns
tf
—
150
—
Eoff
—
3.25
4.25
mJ
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd
Vdc, L = 3
3.0
0 mH,
H RG = 25 Ω
Ω,
TC = 125°C,
125 C, dV/dt = 1000 V/ms)
Energy losses include “tail”
td(off)
—
21
—
ns
tf
—
280
—
Eoff
—
8.0
10
mJ
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
QT
—
6.4
—
nC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola Power Products Division Technical Data
MGS05N60D
TC = 25°C
VGE = 15 V
12.5 V
10 V
2.0
1.5
8.0 V
1.0
0.5
0
2.0
12.5 V
10 V
2.0
1.5
8.0 V
1.0
0.5
4.0
3.0
1.0
2.0
3.0
4.0
5.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
TC = –20°C
12.5 V
VGE = 15 V
10 V
2.0
1.5
8.0 V
1.0
0.5
0
1.0
2.0
3.0
IC = 700 m
1.9
IC = 500 mA
1.8
IC = 300 mA
1.7
1.6
1.5
VG = 15 V
1.4
4.0
–25
0
25
50
75
100
125
TC, CASE TEMPERATURE (°C)
Figure 3. Saturation Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
V FEC , COLLECTOR–TO–EMITTER VOLTAGE (V)
TC = 150°C
–20°C
17
25°C
12
7.0
2.0
0.5
1.0
1.5
2.0
150
10
IC = 500 m
8.0
IC = 300 mA
6.0
4.0
IC = 100 mA
2.0
0
25
50
75
100
125
IF, COLLECTOR CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 5. Diode Forward Voltage
Figure 6. Diode Forward Voltage versus Case
Temperature
Motorola Power Products Division Technical Data
6.0
2.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
22
0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
V FEC , EMITTER–TO–COLLECTOR VOLTAGE (V)
VGE = 15 V
TC = 150°C
0
1.0
IC , COLLECTOR–EMITTER CURRENT (A)
IC , COLLECTOR–EMITTER CURRENT (A)
2.5
VCE , COLLECTOR–TO–EMITTER VOLTAGE (V)
ICE, COLLECTOR–EMITTER CURRENT (A)
2.5
150
3
MGS05N60D
150
15
100
VGE, GATE–TO–EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
TC = 25°C
Cies
Coes
50
Cres
0
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
5.0
0
0
5.0
10
20
15
25
3.0
4.0
6.0
5.0
7.0
Figure 7. Capacitance Variation
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
125°C
30
20
25°C
10
0
0
2.0
QG, TOTAL GATE CHARGE (nC)
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/ms
40
1.0
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
50
0
Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J)
Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J)
10
0.5
1.0
20
15
0.7 A
10
0.3 A
5.0
0
2.0
1.5
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/ms
25
75
50
100
125
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 9. Total Switching Losses versus
Collector–To–Emitter Current
Figure 10. Total Switching Losses versus
Case Temperature
150
ICE, COLLECTOR–EMITTER CURRENT (A)
2.5
2.0
1.5
1.0
TC = 125°C
VGE = 15 V
RG = 25 W
L = 3.0 mH
0.5
0
0
100
200
300
400
500
600
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn–Off
Safe Operating Area
4
Motorola Power Products Division Technical Data
MGS05N60D
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
(RqJC(t))
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.001
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
t, TIME (ms)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 12. Typical Thermal Response
Motorola Power Products Division Technical Data
5
MGS05N60D
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
SECTION X–X
N C
N
CASE 029–05
TO–226AE
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
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6
◊
MGS05N60D/D
Motorola Power Products Division Technical
Data