MOTOROLA MGW12N120

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by MGW12N120/D
SEMICONDUCTOR TECHNICAL DATA
 Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
IGBT IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 160 mJ/A typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Robust High Voltage Termination
C
G
G
C
E
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
Rating
VCGR
1200
Vdc
Gate–Emitter Voltage — Continuous
VGE
± 20
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
PD
123
0.98
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJA
1.0
45
°C/W
TL
260
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MGW12N120
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1200
—
—
870
—
—
mV/°C
25
—
—
Vdc
—
—
—
—
100
2500
—
—
250
—
—
—
2.51
2.36
3.21
3.37
—
4.42
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
12
—
Mhos
pF
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
BVCES
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
µAdc
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
Cies
—
930
—
Coes
—
126
—
Cres
—
16
—
td(on)
—
74
—
tr
—
83
—
td(off)
—
76
—
tf
—
231
—
Eoff
—
0.55
1.33
mJ
td(on)
—
66
—
ns
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc)
ns
tr
—
87
—
td(off)
—
120
—
tf
—
575
—
Eoff
—
1.49
—
mJ
QT
—
31
—
nC
Q1
—
13
—
Q2
—
14
—
—
13
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
LE
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGW12N120
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 125°C
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
40
VGE = 20 V
TJ = 25°C
30
17.5 V
20
15 V
12.5 V
10
VGE = 20 V
30
17.5 V
20
15 V
12.5 V
10
7.5 V
0
0
1
3
2
5
4
7
6
10 V
0
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE = 10 V
250 µs PULSE WIDTH
16
TJ = 125°C
8
25°C
4
0
5
C, CAPACITANCE (pF)
1600
7
9
11
13
15
6
7
3.6
IC = 10 A
3.4
3.2
7.5 A
3.0
2.8
2.6
5A
2.4
VGE = 15 V
250 µs PULSE WIDTH
2.2
2
– 50
0
50
100
150
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Cies
800
400
Coes
Cres
5
10
15
20
25
16
QT
12
Q1
Q2
8
4
0
0
5
10
15
20
25
TJ = 25°C
IC = 10 A
VGE = 15 V
30
35
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
8
3.8
Figure 3. Transfer Characteristics
VCE = 0 V
0
5
4
TJ, JUNCTION TEMPERATURE (°C)
1200
0
3
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
24
12
2
Figure 2. Output Characteristics, TJ = 125°C
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
20
1
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
3
2.5
IC = 10 A
2
7.5 A
1.5
5A
1
TOTAL SWITCHING ENERGY LOSSES (mJ)
VCC = 720 V
VGE = 15 V
TJ = 125°C
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
10
20
30
40
50
1.6
1.4
1.2
6
7
8
5A
25
75
50
100
125
9
10
150
25
20
TJ = 125°C
15
10
TJ = 25°C
5
0
0
1
2
3
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
IC, COLLECTOR–TO–EMITTER CURRENT (A)
5
7.5 A
Figure 8. Total Switching Losses versus
Case Temperature
1.8
1
IC = 10 A
Figure 7. Total Switching Losses versus
Gate Resistance
VCC = 720 V
VGE = 15 V
RG = 20 Ω
TJ = 125°C
2
VCC = 720 V
VGE = 15 V
RG = 20 Ω
TC, CASE TEMPERATURE (°C)
2.4
2.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
RG, GATE RESISTANCE (OHMS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
TOTAL SWITCHING ENERGY LOSSES (mJ)
MGW12N120
4
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ ≤ 125°C
0.1
1
10
100
1000
10000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
4
Motorola TMOS Power MOSFET Transistor Device Data
MGW12N120
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
MGW12N120
PACKAGE DIMENSIONS
0.25 (0.010)
M
–T–
–Q–
T B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
–B–
C
4
U
A
R
1
K
L
2
3
–Y–
P
F
H
V
J
D
0.25 (0.010)
M
Y Q
G
S
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
20.40
20.90
15.44
15.95
4.70
5.21
1.09
1.30
1.50
1.63
1.80
2.18
5.45 BSC
2.56
2.87
0.48
0.68
15.57
16.08
7.26
7.50
3.10
3.38
3.50
3.70
3.30
3.80
5.30 BSC
3.05
3.40
STYLE 4:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.803
0.823
0.608
0.628
0.185
0.205
0.043
0.051
0.059
0.064
0.071
0.086
0.215 BSC
0.101
0.113
0.019
0.027
0.613
0.633
0.286
0.295
0.122
0.133
0.138
0.145
0.130
0.150
0.209 BSC
0.120
0.134
GATE
COLLECTOR
EMITTER
COLLECTOR
CASE 340F–03
TO–247AE
ISSUE E
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6
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*MGW12N120/D*
Motorola TMOS Power MOSFET TransistorMGW12N120/D
Device Data