MOTOROLA MGP20N14CL

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by MGP20N14CL/D
SEMICONDUCTOR TECHNICAL DATA

! 20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.9 VOLTS
135 VOLTS (CLAMPED)
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

C
G
G
C
E
E
CASE 221A–06, Style 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCGR
CLAMPED
Vdc
Gate–Emitter Voltage
VGE
CLAMPED
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Single Pulsed (tp = 10 ms)
IC
ICM
20
60
Adc
Apk
Total Power Dissipation @ TC = 25°C (TO–220)
Derate Above 25°C
PD
150
1.0
Watts
W/°C
TJ, Tstg
– 55 to 175
°C
"
Operating and Storage Temperature Range
Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C
(VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH)
EAS
mJ
500
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
RqJC
RqJA
1.0
62.5
°C/W
TL
275
°C
10 lbfin (1.13 Nm)
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MGP20N14CL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Clamp Voltage
(IClamp = 10 mA, TJ = –40 to 150°C)
BVCES
Vdc
135
Zero Gate Voltage Collector Current
(VCE = 100 V, VGE = 0 V)
(VCE = 100 V, VGE = 0 V, TJ = 150°C)
ICES
Gate–Emitter Clamp Voltage (IG = 1 mA)
BVGES
10
IGES
—
—
1.0
1.0
1.5
4.4
2.0
Gate–Emitter Leakage Current (VGE =
—
—
"5 V, VCE = 0 V)
—
—
10
100
mA
Vdc
mA
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
Threshold Temperature Coefficient (Negative)
VCE(th)
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 175°C)
VCE(on)
Forward Transconductance (VCE
u 15 V, IC = 10 A)
V
mV/°C
V
—
—
1.9
1.8
gfs
8.0
15
—
Mhos
Ciss
—
430
600
pF
Coss
—
182
250
Crss
—
48
100
td(on)
—
TBD
TBD
tr
—
TBD
TBD
td(off)
—
TBD
TBD
tf
—
TBD
TBD
Qg
—
14
20
Qgs
—
3.0
—
Qgd
—
6.0
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
((VCC = 68 V,
V, IC = 20 A,
A,
VGE = 5 V, RG = 9.1 W)
Fall Time
Total Gate Charge
Gate–Emitter Charge
(VCC = 108 V,
V IC = 20 A,
A
VGE = 5 V)
Gate–Collector Charge
ns
nC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N14CL
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
STYLE 9:
PIN 1.
2.
3.
4.
U
H
K
GATE
COLLECTOR
EMITTER
COLLECTOR
Z
L
R
V
J
G
D
N
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
3
MGP20N14CL
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
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P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
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4
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MGP20N14CL/D
Motorola TMOS Power MOSFET Transistor
Device Data