DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Product specification Supersedes data of 1996 Feb 08 1997 Jul 15 Philips Semiconductors Product specification UHF power transistor BLV904 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum temperature profile PIN DESCRIPTION 1, 4, 5, 8 • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS emitter 2, 3 base 6, 7 collector 8 handbook, halfpage 5 c • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. b e 1 DESCRIPTION 4 MSA467 Top view NPN silicon planar epitaxial power transistor in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 960 26 5 ≥13 ≥50 − 2-tone, class-AB f1 = 960; f2 = 960.1 26 5 (PEP) typ. 15.5 typ. 40 typ. −30 1997 Jul 15 2 Philips Semiconductors Product specification UHF power transistor BLV904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 1.2 A IC(AV) collector current (average) − 1.2 A Ptot total power dissipation − 17 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C; note 1 Note 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering recommendations in the General part of handbook SC19a”. MGD934 10 MGD935 16 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 12 1 8 (1) 4 10−1 1 10 VCE (V) 0 102 0 40 80 120 160 200 Ts (°C) (1) Ts = 60 °C. Fig.3 Fig.2 DC SOAR. 1997 Jul 15 3 Total power dissipation as a function of the soldering point temperature. Philips Semiconductors Product specification UHF power transistor BLV904 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER CONDITIONS thermal resistance from junction to mounting base VALUE UNIT 10 K/W Ptot = 17 W; Tmb = 25 °C; note 1 Note 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 60 V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 28 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 4 − − V ICES collector leakage current VCE = 26 V; VBE = 0 − − 1.3 mA hFE DC current gain VCE = 26 V; IC = 600 mA 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 6 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 2.5 − pF MGD936 120 V MGD937 50 handbook, halfpage handbook, halfpage C (pF) hFE 40 (1) (2) 80 30 20 40 10 Cc Cre 0 0 0 0.4 0.8 1.2 IC (A) 0 1.6 (1) VCE = 26 V; tp = 500 µs; δ = < 1 %. (2) VCE = 10 V. Fig.4 1997 Jul 15 10 20 30 40 50 VCE (V) f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.5 4 Capacitance as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV904 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 960 26 15 5 ≥13 typ. 15.5 ≥50 typ. 55 − 2-tone, class-AB f1 = 960; f2 = 960.1 26 15 5 (PEP) typ. 15.5 typ. 40 typ. −30 Ruggedness in class-AB operation The BLV904 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 °C. MGD938 20 Gp (dB) Gp 16 MGD939 8 100 ηC (%) handbook, halfpage handbook, halfpage PL (W) 80 6 12 60 ηC 4 8 40 4 20 2 0 0 0 0 2 4 6 PL (W) 8 0 CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 960 MHz; Tmb = 25 °C. Fig.6 1997 Jul 15 0.1 0.2 PD (W) 0.3 CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 960 MHz; Tmb = 25 °C. Power gain and collector efficiency as functions of load power; typical values. Fig.7 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLV904 MGD940 20 handbook, halfpage 80 ηC (%) Gp (dB) Gp 16 MGD941 6 handbook, halfpage PL (PEP) (W) 60 4 12 40 ηC 2 20 8 0 0 4 0 2 4 PL (PEP) (W) 6 0.05 0 0.1 0.2 0.15 PD (PEP) (W) VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig.8 Power gain and collector efficiency as functions of peak envelope load power; typical values. Fig.9 MGD942 −20 Peak envelope load power as a function of peak envelope drive power; typical values. MGD943 −20 handbook, halfpage handbook, halfpage dim (dBc) dim (dBc) −30 −30 (1) d5 −40 (2) d3 −40 d7 −50 (3) −60 −50 0 2 4 VCE = 26 V; f1 = 960 MHz; f2 = 960.1 MHz. (2) ICQ = 40 mA. (1) ICQ = 15 mA. PL (PEP) (W) 6 0 4 PL (PEP) (W) 6 (3) ICQ = 60 mA. VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values. 1997 Jul 15 2 Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values. 6 Philips Semiconductors Product specification UHF power transistor BLV904 Test circuit information +Vbias handbook, full pagewidth R2 R1 C5 C13 +VC L5 C6 C7 C8 L4 input C18 C17 C15 C14 L15 ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, C10 C3 L2 C4 C11 L9 C2 L1 L3 L6 DUT L7 L8 L10 L11 L12 L13 f = 960 MHz. Fig.12 Class-AB test circuit. 1997 Jul 15 C16 L14 ,,,,, ,,,,, ,,,,, ,,,,, C1 C19 C9 7 C12 MGD962 output Philips Semiconductors Product specification UHF power transistor BLV904 List of components (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE C1, C12 multilayer ceramic chip capacitor; note 1 24 pF C2 multilayer ceramic chip capacitor; note 1 3.3 pF C3 multilayer ceramic chip capacitor, note 1 2.2 pF C4 multilayer ceramic chip capacitor; note 1 1.6 pF C5, C6, C13, C18 multilayer ceramic chip capacitor; note 2 200 pF C7, C17 multilayer ceramic chip capacitor; note 2 110 pF DIMENSIONS C8, C14, C15, C16 multilayer ceramic chip capacitor 100 nF C9, C19 tantalum SMD capacitor 10 µF; 35 V C10 multilayer ceramic chip capacitor; note 1 1.8 pF C11 multilayer ceramic chip capacitor; note 1 13 pF L1 stripline; note 3 50 Ω 8.2 × 0.65 mm L2 stripline; note 3 4.9 Ω 6 × 14 mm L3, L6 stripline; note 3 24.5 Ω 1.5 × 2 mm L4 RF-choke 0.22 µH L5, L15 grade 4S2 ferroxcube chip-bead L7 stripline; note 3 46.3 Ω 12.22 × 0.7 mm L8 stripline; notes 3 and 4 4.3 Ω 7.58 × 16.1 mm L9 stripline; note 3 4.3 Ω 10 × 16.1 mm L10 stripline; note 3 34.3 Ω 1.9 × 1.2 mm L11 stripline; note 3 34.3 Ω 3.2 × 1.2 mm L12 stripline; note 3 34.3 Ω 4.8 × 1.2 mm L13 stripline; note 3 6.7 Ω 8 × 9.9 mm L14 5 turns enamelled 1 mm copper wire CATALOGUE No. 2222 581 16641 4330 030 36301 R1 metal film resistor 100 Ω; 0.4 W DUT transistor BLV904 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (εr = 10.2); thickness 0.64 mm. 4. Not connected over total length; only 7.58 mm connected. 1997 Jul 15 8 Philips Semiconductors Product specification UHF power transistor BLV904 65 handbook, full pagewidth 40 +VC +Vbias + C9 C8 + C18 C7 C16 C14 C6 R1 L5 L15 C19 C17 C15 R2 L14 C5 L9 L4 C2 L1 L6 L3 C1 L10 L11 L12 L7 L8 C3 L2 C13 C10 C11 C12 L13 C4 MGD964 Dimensions in mm. f = 960 MHz. The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.13 Component layout for class-AB test circuit. 1997 Jul 15 9 Philips Semiconductors Product specification UHF power transistor BLV904 MGD944 4 MGD945 24 handbook, halfpage handbook, halfpage Zi (Ω) XL ZL (Ω) xi 3 16 ri 2 RL 8 1 0 800 850 900 950 f (MHz) 0 800 1000 850 900 950 f (MHz) 1000 VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 °C. VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 °C. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. handbook, halfpage MGD946 20 Gp (dB) handbook, halfpage 16 Zi ZL MBA451 12 Fig.17 Definition of transistor impedance. 8 MOUNTING RECOMMENDATIONS 4 0 800 850 900 950 f (MHz) Heat from the device is transferred via the leads and the metallized underside. For optimum heat transfer it is recommended that the transistor be mounted on a grounded metallized area on the component side of the printed-circuit board. This metallized area should contain a large number of metallized, solder-filled through-holes. The non-component side of the printed-circuit board forms a ground plane. When the printed-circuit board is mounted on the heatsink using heatsink compound, a thermal resistance from mounting base to heatsink of 0.9 K/W can be attained. 1000 VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 °C. Fig.16 Power gain as a function of frequency; typical values. 1997 Jul 15 10 Philips Semiconductors Product specification UHF power transistor BLV904 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409B D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.15 0.10 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 0.84 0.69 0.10 0.00 0.25 0.25 2° 0° inches 0.093 0.081 0.023 0.017 0.006 0.004 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.033 0.027 0.004 0.000 0.010 0.010 2° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409B 1997 Jul 15 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF power transistor BLV904 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 15 12 Philips Semiconductors Product specification UHF power transistor BLV904 NOTES 1997 Jul 15 13 Philips Semiconductors Product specification UHF power transistor BLV904 NOTES 1997 Jul 15 14 Philips Semiconductors Product specification UHF power transistor BLV904 NOTES 1997 Jul 15 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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