DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 820 to 960 MHz range. handbook, halfpage PINNING - SOT171 PIN SYMBOL 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter 2 4 c 6 DESCRIPTION b 1 3 e 5 Top view MAM141 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 30 ≥9 ≥ 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1995 Apr 11 2 Philips Semiconductors Product specification UHF power transistor BLV934 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 4 A IC(AV) average collector current − 4 A Ptot total power dissipation − 68 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C up to Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Ptot = 68 W; Tmb = 25 °C 2.57 K/W 0.4 K/W MLC678 10 MLC679 80 handbook, halfpage UNIT handbook, halfpage Ptot (W) IC (A) (1) (2) 60 (2) (1) 1 40 20 10 1 1 10 V CE (V) 0 10 2 0 (1) Tmb = 25 °C. (2) Th = 70 °C. 40 60 80 100 120 140 Th ( oC) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1995 Apr 11 20 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power transistor BLV934 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 50 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 1 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 28 V − − 2 mA hFE DC current gain VCE = 10 V; IC = 1.5 A; note 1 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 25 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 17 − pF Note 1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01. MLC680 MLC681 100 Cc 100 handbook, halfpage handbook, halfpage h FE (pF) 80 80 (1) 60 60 (2) 40 40 20 20 0 0 1 2 3 4 5 0 6 0 10 I C (A) Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01. (1) VCE = 26 V. (2) VCE = 10 V. Fig.4 1995 Apr 11 20 30 40 50 VCB (V) IE = ie = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.5 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV934 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.4 K/W. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 100 30 ≥9 ≥55 Ruggedness in class-AB operation The BLV934 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 100 mA; Th = 25 °C; Rth mb-h = 0.4 K/W. MLC682 16 MLC683 80 handbook, halfpage 40 handbook, halfpage η (%) Gp (dB) 12 8 Gp 60 30 η 40 20 20 10 0 0 4 0 0 10 PL (W) 20 30 40 0 P L (W) 2 VCE = 26 V. ICQ = 100 mA. VCE = 26 V. ICQ = 100 mA. f = 960 MHz. f = 960 MHz. Fig.6 Power gain and efficiency as functions of load power; typical values. 1995 Apr 11 Fig.7 5 4 P i (W) 6 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth R1 VB C6 C18 C14 C20 C15 C17 L13 C8 input 50 Ω BLV934 C1 R2 VCC L14 C7 L12 C16 L11 ,,,,,,,,,,, ,,,,,,,,,,, L1 L2 C2 L3 C3 C5 DUT L4 C10 L5 L6 L7 L8 C4 C9 L9 L10 C11 C13 C19 output 50 Ω C12 MGC325 Fig.8 Class-AB test circuit at f = 960 MHz. List of components (see Figs 8 and 9) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C13 multilayer ceramic chip capacitor; note 1 43 pF C2, C3, C11, C12 film dielectric trimmer 1.4 pF to 5.5 pF C4, C5 multilayer ceramic chip capacitor; note 2 10 pF C6, C17 multilayer ceramic chip capacitor; note 1 150 pF C7, C16 ceramic capacitor 22 nF 2222 640 08223 C8, C19 solid aluminium capacitor 10 µF, 63 V 2222 030 38109 C14 multilayer ceramic chip capacitor; note 1 20 pF C9, C10 multilayer ceramic chip capacitor; note 2 11 pF C20 multilayer ceramic chip capacitor; note 1 1 nF C15, C18 multilayer ceramic chip capacitor; note 1 62 pF L1 stripline; note 3 50 Ω length 16.8 mm width 2.4 mm L2 stripline; note 3 50 Ω length 14.8 mm width 2.4 mm L3 stripline; note 3 50 Ω length 13.7 mm width 2.4 mm 1995 Apr 11 6 2222 809 09001 Philips Semiconductors Product specification UHF power transistor COMPONENT BLV934 DESCRIPTION VALUE DIMENSIONS L4 stripline; note 3 43 Ω length 3.5 mm width 3 mm L5 stripline; note 3 43 Ω length 6.4 mm width 3 mm L6 stripline; note 3 43 Ω length 5.8 mm width 3 mm L7 stripline; note 3 43 Ω length 2.4 mm width 3 mm L9 stripline; note 3 50 Ω length 15.5 mm width 2.4 mm L10 stripline; note 3 50 Ω length 20 mm width 2.4 mm L11 4 turns enamelled 0.8 mm copper wire 45 nH int. diameter 4mm length 5 mm leads 2 × 5 mm L12 3 turns enamelled 0.8 mm copper wire 30 nH int. diameter 3mm length 5 mm leads 2 × 5 mm L13, L14 grade 3B Ferroxcube wideband RF choke R1, R2 metal film resistor CATALOGUE No. 4312 020 36642 10 Ω; 0.4 W 2322 151 71009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32". 1995 Apr 11 7 Philips Semiconductors Product specification UHF power transistor BLV934 122 handbook, full pagewidth copper straps copper straps rivets rivets 70 rivets rivets copper straps copper straps C19 C8 C20 L13 L14 C17 C16 C6 C7 R2 R1 C18 C14 C15 L12 L11 C10 C5 L1 L2 L3 C4 C1 L4 L5 L6 L7 L8 L9 L10 C13 C9 C2 C11 C3 C12 MGC326 Dimensions in mm. The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component side and the ground plane. Fig.9 Component layout for 960 MHz class-AB test circuit. 1995 Apr 11 8 Philips Semiconductors Product specification UHF power transistor BLV934 MLC684 MLC685 5 5 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 4 4 xi 3 3 RL 2 2 ri 1 0 800 840 880 XL 1 920 0 800 960 1000 f (MHz) VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W. 840 880 920 960 1000 f (MHz) VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W. Fig.10 Input impedance as a function of frequency (series components); typical values. Fig.11 Load impedance as a function of frequency (series components); typical values. MLC686 12 handbook, halfpage Gp (dB) 8 handbook, halfpage Zi 4 ZL 0 800 840 880 920 MBA451 960 1000 f (MHz) VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 °C; Rth mb-h = 0.4 K/W. Fig.12 Power gain as a function of frequency; typical values. 1995 Apr 11 Fig.13 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLV934 PACKAGE OUTLINE 11.5 10.5 handbook, full pagewidth 5.85 2.25 min 1 (2x) 3.25 9.15 2.85 1 2 3 4 5 6 25.2 max 18.42 2.25 1.85 (2x) 3.45 (2x) 3.15 2.8 4.50 4.05 7.0 max 0.14 6 max MBC828 - 1 Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed. Fig.14 SOT171. 1995 Apr 11 10 9.3 max Philips Semiconductors Product specification UHF power transistor BLV934 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Box 218, 5600 MD MD, EINDHOVEN, EINDHOVEN, The The Netherlands, Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD38 © Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123052/1500/01/pp12 Document order number: Date of release: 1995 Apr 11 9397 750 00071