DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. • Implanted ballasting resistors an for optimum temperature profile • Gold metallization ensures excellent reliability QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) GP (dB) ηc (%) c.w. class-AB 960 24 15 > 7.5 > 50 PINNING - SOT171A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector handbook, halfpage 5 e emitter 6 e emitter 2 4 c 6 b 1 Top view 3 e 5 MAM141 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 2 Philips Semiconductors Product specification UHF power transistor BLV98CE LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector base voltage open emitter − 50 V VCEO collector emitter voltage open base − 27 V VEBO emitter base voltage open collector − 3.5 V IC collector current DC or average − 1.5 A ICM collector current peak value f > 1 MHz − 4.5 A Ptot total power dissipation f > 1 MHz Tmb = 25 °C − Tstg storage temperature Tj operating junction temperature 40 W −65 150 °C − 200 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rthj-mb from junction to mounting base (RF) − 4.4 K/W Rth mb-h from mounting base to heatsink − 0.4 K/W MDA449 10 MDA450 60 handbook, halfpage handbook, halfpage Ptot IC (W) (A) 40 Tmb = 25 °C (2) Th = 70 °C 1 (1) 20 10−1 1 10 VCE (V) 0 102 0 40 80 120 Th (°C) (1) DC or RF operation (2) short-term operation during mismatch Fig.2 DC SOAR. March 1993 Fig.3 Power/temperature derating. 3 160 Philips Semiconductors Product specification UHF power transistor BLV98CE CHARACTERISTICS at Tj = 25 °C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter IC = 25 mA 50 − − V V(BR)CEO collector-emitter breakdown voltage open base IC = 50 mA 27 − − V V(BR)EBO emitter-base breakdown voltage open collector IE = 5 mA 3.5 − − V ICES collector leakage current VBE = 0 VCE = 27 V − − 5 mA hFE DC current gain IC = 1 A VCE = 20 V 15 − − Cc collector capacitance at f = 1 MHz IE = Ie = 0 VCB = 24 V − 23 − pF Cre feedback capacitance at f = 1 MHz IC = 0 VCE = 24 V − 14 − pF Ccf collector-flange capacitance − 2 − pF MDA451 100 hFE MDA452 100 Cc handbook, halfpage handbook, halfpage VCE = 24 V (pF) 80 80 20 V 60 60 40 40 20 20 0 0 Fig.4 1 2 3 IC (A) 0 4 0 DC current gain as a function of collector current; typical values. March 1993 Fig.5 4 10 20 VCB (V) 30 Output capacitance as a function of VCB; typical values. Philips Semiconductors Product specification UHF power transistor BLV98CE APPLICATION INFORMATION RF performance in a common emitter test circuit. Th = 25 °C, Rth mb-h = 0.4 K/W unless otherwise specified. MODE OF OPERATION f (MHz) VCE (V) IC(ZS) (mA) PL (W) GP (dB) ηc (%) c.w. class-AB 960 24 30 15 > 7.5 typ. 8.5 > 50 typ. 55 MDA453 10 Gp handbook, halfpage (dB) 8 Gp 100 η (%) MDA454 30 handbook, halfpage PL (W) 80 20 6 60 η 40 4 10 20 2 0 0 0 5 0 10 15 20 0 25 2 4 PL (W) Fig.6 Power gain and efficiency as a function of load power; typical values. Fig.7 6 PS (W) 8 Load power as a function of input power; typical values. Ruggedness in class-AB operation The BLV98CE is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VCE = 24 V, IC(ZS) = 30 mA, f = 960 MHz at rated output power. March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV98CE handbook, full pagewidth R1 VB R2 C8 L5 C9 L7 ,,,,,, ,,,,,, ,,,,,, ,,,,,, C1 L1 L2 C2 L3 C3 C5 L4 D.U.T. C4 C11 L9 C12 C14 L10 L11 L12 C13 Fig.8 Test circuit BLV98CE class-AB. March 1993 VCC L8 L6 C7 50 Ω input C6 6 L13 C15 C17 C10 50 Ω output C16 MDA455 Philips Semiconductors Product specification UHF power transistor BLV98CE List of components (Fig.8) DESIGNATION DESCRIPTION VALUE DIMENSIONS C1, C6, C7, C8,C17 multilayer ceramic chip capacitor 330 pF C2, C3, C15, C16 film dielectric trimmer 1.4 to 5.5 pF C4, C5 multilayer ceramic chip capacitor note 1 4.3 pF C9 35 V solid aluminium capacitor 2.2 µF C10 multilayer ceramic chip capacitor 3 × 100 nF in parallel C11, C12 multilayer ceramic chip capacitor note 1 5.6 pF C13, C14 multilayer ceramic chip capacitor note 2 5.1 pF L1, L13 microstrip note 3 50 Ω 9.0 × 2.4 mm L2, L12 microstrip note 3 50 Ω 23.0 × 2.4 mm L3 microstrip note 3 50 Ω 16.0 × 2.4 mm L4 microstrip note 3 43 Ω 3.0 × 3.0 mm L5 3 turns enamelled 0.8 mm copper wire L6, L8 grade 3B ferroxcube wide-band RF choke L7 4 turns enamelled 0.8 mm copper wire L9 microstrip note 3 43 Ω 3.5 × 3.0 mm L10 microstrip note 3 43 Ω 11.0 × 3.0 mm L11 microstrip note 3 50 Ω 4.5 × 2.4 mm R1, R2 0.4 W metal film resistor 10 Ω CATALOGUE NO. 2222 809 09001 2222 128 50228 int. dia. 3 mm length 5 mm leads 2 × 5 mm 4312 020 36642 int. dia. 4 mm length 5 mm leads 2 × 5 mm 2322 151 71009 Notes 1. ATC capacitor type 100A or capacitor of the same quality. 2. ATC capacitor type 100B or capacitor of the same quality. 3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV98CE 122 mm handbook, full pagewidth copper straps copper straps rivets rivets 70 mm rivets rivets M2 copper straps copper straps M3 C7 L6 L8 R1 C6 R2 C8 L5 L7 C11 C4 C1 L1 L2 L3 L4 L9 C5 C3 C9 C10 L11 L12 L13 L10 C17 C12 C13 C3 C15 C16 MDA456 The circuit and components are located on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the component side and the ground plane. Fig.9 Printed circuit board and component layout for 960 MHz test circuit. March 1993 8 Philips Semiconductors Product specification UHF power transistor BLV98CE MDA457 6 MDA458 6 handbook, halfpage handbook, halfpage Zi (Ω) XL ZL (Ω) xi 4 4 ri RL 2 0 800 2 850 900 950 f (MHz) 0 800 1000 Fig.10 Input impedance; series components; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. handbook, halfpage (dB) 8 6 4 2 0 800 850 900 950 f (MHz) 1000 Fig.12 Power gain; class-AB operation; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. March 1993 900 950 f (MHz) 1000 Fig.11 Load impedance; series components; VCE = 24 V; PL = 15 W; Rth mb-h = 0.4 K/W; typical values. MDA459 10 Gp 850 9 Philips Semiconductors Product specification UHF power transistor BLV98CE PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A March 1993 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLV98CE DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11