STMICROELECTRONICS BUL128FP

BUL128FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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1
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
4
A
Collector Peak Current (tp < 5 ms)
8
A
IC
I CM
Base Current
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P t ot
Total Dissipation at T c = 25 C
T stg
St orage Temperature
IB
Tj
April 1998
o
Max. Operating Junction Temperature
31
W
-65 to 150
o
C
150
o
C
1/7
BUL128FP
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
4.1
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
I CES
Collector Cut-off
Current (V BE = -1.5 V)
V EBO
Emitter-Base Voltage
I E = 10 mA
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Collector Cut-Off
Current (IB = 0)
V CE = 400 V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
V CEO(sus)
I CEO
V CE(sat )∗
V BE(s at)∗
h FE∗
V CE = 700 V
V CE = 700 V
0.5 A
1 A
2.5 A
4 A
Typ .
Tj = 125 o C
L = 25 mH
IB
IB
IB
IB
=
=
=
=
V
DC Current G ain
I C = 10 mA
IC = 1 A
IC = 2 A
V CE = 5 V
VCE = 5 V
VCE = 5 V
10
15
14
1.9
IC = 2 A
IB2 = -0.4 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 2 A
V BEoff = -5 V
V c la mp = 200 V
(see fig.1)
IB1 = 0.4 A
R BB = 0 Ω
250
µA
0.7
1
1.5
V
V
V
V
1.1
1.2
1.3
V
V
V
0.5
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
V CC = 125 V
I B1 = 0.4 A
T p = 30 µs
(see fig.2)
µA
µA
V
I C = 0.5 A
IC = 1 A
I C = 2.5 A
RESISTIVE LO AD
Storage Time
Fall T ime
Un it
100
500
9
0.1 A
0.2 A
0.5 A
1 A
ts
tf
Max.
400
Base-Emitter
Saturation Voltage
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
=
=
=
=
Min.
45
40
0.2
2.9
0.4
µs
µs
0.6
0.1
1
0.2
µs
µs
BUL128FP
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUL128FP
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BUL128FP
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BUL128FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
6/7
L4
BUL128FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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