INFINEON CFY25-20

GaAs FET
●
●
●
●
●
CFY 25
Low noise
High gain
For front-end amplifiers
lon-implanted planar structure
All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
Package1)
CFY 25-17
CFY 25-20
CFY 25-23
C5
C6
C7
Q62703-F106
Q62703-F107
Q62703-F108
D
Micro-X
S
G
S
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
5
V
Drain-gate voltage
VDG
7
Gate-source voltage
VGS
–5…+0
Drain current
ID
80
mA
Total power dissipation, TS ≤ 56 ˚C2)
Ptot
250
mW
Channel temperature
Tch
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Rth chS
375
Thermal Resistance
Channel - soldering point2)
1)
2)
K/W
For detailed information see chapter Package Outlines.
TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group
1
07.94
CFY 25
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Drain-source saturation current
VDS = 3 V, VGS = 0
IDSS
15
30
60
mA
Pinch-off voltage
ID = 1 mA, VDS = 3 V
Vp
– 0.3
– 1.0
– 3.0
V
Gate leakage current
ID = 15 mA, VDS = 3 V
IG
–
0.1
2
µA
Transconductance
ID = 15 mA, VDS = 3 V
gm
30
40
–
mS
Noise figure
IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
F
–
–
–
1.6
1.9
2.2
1.7
2.0
2.3
Associated gain
IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
Ga
9
8.5
8.5
9.5
9
9
–
–
–
Semiconductor Group
2
dB
CFY 25
Total power dissipation Ptot = f (TS; TA*)
* Package mounted on alumina
Output characteristics ID = f (VDS)
Transfer characteristics ID = f (VG)
VDS = 3 V
Semiconductor Group
3
CFY 25
Common Source Noise Parameters
f
Fmin
Ga
Γopt
GHz
dB
dB
MAG
ANG
RN
rN
N
F50 Ω
G(F50 Ω)
Ω
–
–
dB
dB
29
21
13
7.3
5.6
7.1
18
0.580
0.420
0.260
0.146
0.112
0.142
0.360
0.10
0.14
0.19
0.23
0.28
0.29
0.46
2.0
1.8
1.8
2.0
2.4
2.5
3.0
11.4
10.5
9.3
8.2
7.3
6.4
5.8
ID = 15 mA, VDS = 3.0 V, Z0 = 50 Ω
2
4
6
8
10
12
14
0.60
0.77
1.00
1.25
1.55
1.77
2.15
18.5
14.6
12.4
11.0
9.8
9.0
8.1
0.70
0.59
0.50
0.47
0.45
0.43
0.41
31
63
103
140
174
– 156
– 130
Source impedance for min. noise figure
ID = 15 mA, VDS = 3 V
Semiconductor Group
Circles of constant noise figure
ID = 15 mA, VDS = 3 V, f = 12 GHz
4
CFY 25
Minimum noise figure Fmin = f (f)
Associated gain Ga = f (f)
ID = 15 mA, VDS = 3 V, ZSopt
Semiconductor Group
Minimum noise figure Fmin = f (ID)
Associated gain Ga = f (ID)
VDS = 3 V, f = 12 GHz, ZSopt
5
CFY 25
Common Source S Parameters
f
S11
GHz
MAG
S21
ANG
MAG
S12
ANG
S22
MAG
ANG
MAG
ANG
0.026
0.049
0.069
0.083
0.093
0.100
0.105
0.107
0.108
0.109
0.110
0.110
0.110
0.112
0.115
0.119
0.125
0.132
75
61
45
33
21
11
1
– 9
– 17
– 24
– 30
– 36
– 42
– 49
– 55
– 63
– 72
– 83
0.68
0.66
0.63
0.59
0.56
0.52
0.48
0.45
0.42
0.41
0.39
0.37
0.36
0.35
0.34
0.33
0.32
0.31
– 13
– 27
– 41
– 55
– 66
– 77
– 89
– 102
– 112
– 124
– 134
– 145
– 158
– 169
180
165
151
136
ID = 15 mA, VDS = 3 V, Z0 = 50 Ω
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.96
0.91
0.86
0.81
0.77
0.74
0.70
0.68
0.67
0.67
0.66
0.66
0.66
0.66
0.66
0.66
0.66
– 21
– 42
– 67
– 87
– 107
– 125
– 145
– 165
178
161
146
132
117
103
90
77
63
47
3.83
3.73
3.55
3.34
3.10
2.92
2.74
2.57
2.42
2.31
2.20
2.10
2.02
1.94
1.90
1.84
1.80
1.78
161
141
121
103
86
70
54
37
23
9
– 4
– 17
– 31
– 44
– 57
– 70
– 84
– 99
S11, S22
ID = 15 mA, VDS = 3 V, Z0 = 50 Ω
Semiconductor Group
S12, S21
ID = 15 mA, VDS = 3 V, Z0 = 50 Ω
6