Silicon N Channel MOSFET Triode ● BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current ± 10 Total power dissipation, TA ≤ 60 ˚C Ptot 200 Storage temperature range Tstg – 55 … + 150 ˚C Channel temperature Tch 150 Rth JA ≤ IGSM mW Thermal Resistance Junction - ambient 2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 999 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VGS = 4 V V(BR) DS 20 – – V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ± V(BR) GSS 6.5 – 12 Gate-source leakage current VGS = 5 V, VDS = 0 ± IGSS – – 50 nA Drain current VDS = 10 V, VGS = 0 IDSS 5 – 18 mA Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA – VGS (p) – – 2.5 V Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz gfs 14 16 – mS Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cgss – 2.5 – pF Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdg – 25 – fF Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdss – 1 – pF Power gain (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2 mS, GL = 0.5 mS Gp – 25 – dB Noise figure (test circuit) VDS = 10 V, ID = 10 mA, f = 200 MHz, GG = 2 mS, GL = 0.5 mS F – 1 – ± AC Characteristics Semiconductor Group 2 BF 999 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) Gate transconductance gfs = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 kHz Drain current ID = f (VGS) VDS = 10 V Semiconductor Group 3 BF 999 Gate input capacitance Cgss = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VGS = 0, IDSS = 10 mA, f = 1 MHz Reverse transfer capacitance C dg = f (VDS) IDSS = 10 mA, f = 1 MHz, VGS = 0 Gate input admittance y11s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Semiconductor Group 4 BF 999 Gate forward transfer admittance y21s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Output admittance y22s VDS = 10 V, VGS = 0, IDSS = 10 mA, (common-source) Test circuit for power gain and noise figure f = 200 MHz Semiconductor Group 5