CENTRAL CQDD

CQDD-25M
CQDD-25N
SURFACE MOUNT
25 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-25M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CQDD-25M
CQDD-25N
Peak Repetitive Off-State Voltage
VDRM
600
800
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
IT(RMS)
ITSM
25
A
150
A
I2t
94
A2s
PGM
PG (AV)
IGM
40
W
1.0
W
10
A
I 2t
Value for Fusing, t=8.3ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
UNITS
V
VGM
di/dt
16
V
10
A/μs
-40 to +125
°C
-40 to +150
°C
Thermal Resistance
TJ
Tstg
ΘJA
60
°C/W
Thermal Resistance
ΘJC
1.7
°C/W
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
Operating Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
MAX
UNITS
11.1
VD=12V, RL=10Ω, QUAD IV
IT=100mA
28.2
60
mA
18.4
50
mA
1.03
1.50
V
1.74
2.50
V
VTM
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=35A, tp=380μs
dv/dt
VD=2 /3 VDRM, RGK=∞, TC=125°C
VGT
TYP
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
10
μA
2.0
mA
30
mA
1.80
6.0
V
V/μs
R2 (12-February 2010)
CQDD-25M
CQDD-25N
SURFACE MOUNT
25 AMP SILICON TRIAC
600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) Gate
4) MT2
MARKING:
FULL PART NUMBER
R2 (12-February 2010)
w w w. c e n t r a l s e m i . c o m