DINTEK DTP3006_13

DTP3006
www.din-tek.jp
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) () Max.
ID (A)
0.0600 at VGS = - 10 V
- 30
0.0850 at VGS = - 4.5 V
- 24
Qg (Typ.)
67
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
TO-220AB
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
G
D
G D S
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
ID
V
- 30
- 29
IDM
- 100
IAS
- 32
EAS
51
PD
Unit
41.7
A
mJ
b
2.1
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
60
Junction-to-Case (Drain)
RthJC
3
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
1
DTP3006
www.din-tek.jp
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
- 2.5
± 250
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 150 °C
- 250
VDS - 10 V, VGS = - 10 V
ID(on)
RDS(on)
gfs
- 30
V
nA
µA
A
VGS = - 10 V, ID = - 14 A
0.055
0.060
VGS = - 4.5 V, ID = - 12 A
0.075
0.085
VDS = - 20 V, ID = - 14 A
40

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
67
VDS = - 20 V, VGS = - 10 V, ID = - 14 A
Rise Timec
Fall Timec
f = 1 MHz
td(on)
tr
c
td(off)
100
nC
13.5
14
Rg
Turn-On Delay Timec
pF
330
280
Qgd
Gate Resistance
Turn-Off Delay Time
2765
VGS = 0 V, VDS = - 20 V, f = 1 MHz
VDD = - 20 V, RL = 2 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
0.5
2.5
5
10
20
11
20
42
63
12
20
- 36
Pulsed Current
ISM
- 100
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 10 A, VGS = 0 V
- 0.8
IF = - 10 A, dI/dt = 100 A/µs
40
trr
IRM(REC)
Qrr
ns
b
IS
Continuous Current

A
- 1.5
V
38
57
ns
2.3
3.5
A
60
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTP3006
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
0.030
VGS = 10 V thru 4 V
0.025
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
30
20
10
VGS = 3 V
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
0.005
0
0
1
0.5
1.5
0
2
20
40
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
80
100
On-Resistance vs. Drain Current
Output Characteristics
1.0
0.040
ID = 14 A
0.034
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0.8
0.6
TC = 25 °C
0.4
0.2
TC = 125 °C
TC = - 55 °C
0
0
0.7
1.4
2.1
2.8
0.028
0.016
TJ = 25 °C
0.010
2
3.5
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
50
10
TC = 25 °C
ID = 14 A
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
40
g fs - Transconductance (S)
TJ = 125 °C
0.022
30
TC = 125 °C
20
10
8
VDS = 20 V
6
VDS = 10 V
4
VDS = 32 V
2
0
0
0
6
12
18
ID - Drain Current (A)
Transconductance
24
30
0
14
28
42
56
70
Qg - Total Gate Charge (nC)
Gate Charge
3
DTP3006
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.3
100
2.0
TJ = 150 °C
10
VGS(th) (V)
IS - Source Current (A)
ID = 250 μA
1.7
TJ = 25 °C
1
1.4
1.1
- 50
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
4300
125
150
125
150
51
VDS (V) Drain-to-Source Voltage
ID = 250 μA
C - Capacitance (pF)
3440
Ciss
2580
1720
860
Coss
49
47
45
Crss
43
- 50
0
0
10
20
30
VDS - Drain-to-Source Voltage (V)
40
- 25
0
25
50
75
100
TJ - Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.2
40
VGS = 10 V
1.9
30
1.6
VGS = 4.5 V
1.3
20
10
1.0
0.7
- 50
4
ID - Drain Current (A)
RDS(on) - On-Resistance (Normalized)
ID = 14 A
0
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
0
25
50
75
100
TC - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
DTP3006
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
100
IDAV (A)
TJ = 150 °C
ID - Drain Current (A)
100
TJ = 25 °C
10
100 μs
10
1 ms
Limited by R DS(on)*
10 ms
DC, 1 s, 100 ms
1
0.1
1
0.000001
TC = 25 °C
Single Pulse
0.01
0.00001
0.001
0.0001
0.01
0.1
0.1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
BVDSS Limited
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)