DINTEK DTS2301S

DTS2301S
www.din-tek.jp
P-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) () at VGS = - 4.5 V
0.105
RDS(on) () at VGS = - 2.5 V
0.130
-3
ID (A)
Configuration
Single
S
TO-236
(SOT-23)
G
1
G
3
S
D
2
Top View
D
DTS2301S
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
DTS2301S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
IS
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
-3
- 2.2
-3
IDM
- 15
IAS
-6
EAS
4
PD
TC = 125 °C
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
1
°C/W
DTS2301S
www.din-tek.jp
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = - 250 μA
- 20
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 0.45
-
- 1.5
VDS = 0 V, VGS = ± 8 V
-
-
± 100
VGS = 0 V
VDS = - 20 V
-
-
-1
-
-
- 50
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 20 V, TJ = 125 °C
VGS = 0 V
VDS = - 20 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 4.5 V
VDS5 V
-8
-
-
VGS = - 4.5 V
ID = - 2.8 A
-
0.080
0.105
VGS = - 2.5 V
ID = - 2 A
-
0.110
0.130
VDS = - 1.6 V, ID = - 2.8 A
-
7
-
-
340
425
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
80
100
Reverse Transfer Capacitance
Crss
-
55
70
Total Gate Chargec
Qg
-
5
8
-
0.7
-
-
1.3
-
5.5
10
14.5
-
15
22
-
14
21
-
30
45
-
9
15
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 4.5 V
VDS = - 10 V, f = 1 MHz
VDS = - 10 V, ID = - 2.8 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 10 V, RL = 10 
ID  - 1 A, VGEN = - 4.5 V, Rg = 1 
tf
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 1.6 A, VGS = 0
-
-
-3
A
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS2301S
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
10
T C = 25 °C
V GS = 10 V thru 2.5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
8
V GS = 2 V
6
4
V GS = 1.5 V
2
4
0
3
4
1
2
VDS - Drain-to-Source Voltage (V)
0
T C = 125 °C
6
2
V GS = 1 V
0
T C = - 55 °C
0
5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
Output Characteristics
0.5
10
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
T C = - 55 °C
8
T C = 25 °C
6
T C = 125 °C
4
0.4
0.3
0.2
V GS = 2.5 V
2
0.1
0
0
V GS = 4.5 V
0
1
2
3
ID - Drain Current (A)
4
0
5
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
600
4.5
4.0
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
500
400
Ciss
300
200
Coss
100
ID = 2.8 A
3.5
V DS = 10 V
3.0
2.5
2.0
1.5
1.0
0.5
Crss
0
0.0
0
5
10
15
VDS - Drain-to-Source Voltage (V)
20
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Capacitance
3
4
5
DTS2301S
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 2.8 A
10
1.7
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
V GS = 4.5 V
0.8
T J = 150 °C
1
T J = 25 °C
0.1
0.01
V GS = 2.5 V
0.5
- 50
0.001
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0
175
On-Resistance vs. Junction Temperature
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.5
1.0
VGS(th) Variance (V)
0.6
0.4
0.3
ID = 250 μA
0.2
ID = 5 mA
0.1
0
0.2
T J = 150 °C
- 0.1
T J = 25 °C
0.0
0
- 0.2
- 50
5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
- 25
0
On-Resistance vs. Gate-to-Source Voltage
ID = 1 mA
- 23
- 24
- 25
- 26
- 27
- 50
- 25
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
- 22
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
0.4
0.8
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
125
150
175
DTS2301S
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
1 ms
10 ms
1
100 ms
1s
10 s, DC
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 50 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
5
1
10
DTS2301S
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
www.din-tek.jp
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
1
Legal Disclaimer Notice
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1