EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 FEATURES • • • • • • 2X .065 ±.015 P1dB G1dB PAE .160 .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL .096 .290±0.005 NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm OUTPUT POWER 15.5 dB TYPICAL POWER GAIN AT 2 GHz 0.5x9600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 34.5 36.0 36.0 15.5 10.5 14.0 MAX UNITS dBm dB 30 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1600 2720 GM Transconductance VDS = 3 V, VGS = 0 V 1100 1450 VP Pinch-off Voltage VDS = 3 V, IDS = 27 mA -2.0 % 3520 mA mS -3.5 V BVGD Drain Breakdown Voltage IGD = 9.6 mA -13 -15 V BVGS Source Breakdown Voltage IGS = 9.6 mA -7 -14 V RTH* Thermal Resistance o 6* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 10V -5V 43.2 mA -7.2 mA 33 dBm 175oC -65/175oC 23 W 8V -4V 14.4 mA -2.4 mA @ 3dB Compression 175oC -65/175oC 23 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised May 2006 EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 S-PARAMETERS 8V, 1/2 Idss FREQ (GHz) --- S11 --MAG ANG --- S21 --- --- S12 --- --- S22 --- MAG ANG MAG ANG MAG ANG 0.5 0.983 -155.2 6.432 94.5 0.012 24.2 0.810 178.8 1.0 0.986 -175.0 3.285 76.9 0.013 25.8 0.779 175.0 1.5 0.936 174.1 2.855 68.2 0.020 29.5 0.739 168.6 2.0 0.929 166.2 2.194 58.4 0.023 29.4 0.736 164.9 2.5 0.923 160.3 1.835 49.4 0.026 29.6 0.725 161.7 3.0 0.920 154.5 1.643 40.4 0.031 28.3 0.703 158.0 3.5 0.912 147.2 1.532 30.1 0.038 24.5 0.679 152.7 4.0 0.898 138.0 1.466 18.3 0.045 17.6 0.656 145.7 4.5 0.888 126.1 1.402 5.2 0.052 9.6 0.634 136.8 5.0 0.879 113.1 1.339 -8.7 0.059 0.6 0.624 127.2 5.5 0.870 99.9 1.271 -22.4 0.066 -9.4 0.621 117.7 6.0 0.862 87.6 1.212 -35.9 0.073 -19.0 0.609 108.0 6.5 0.860 75.1 1.176 -46.6 0.081 -25.3 0.571 104.6 7.0 0.841 63.8 1.194 -59.9 0.095 -34.5 0.560 92.9 7.5 0.829 48.5 1.217 -77.1 0.110 -48.8 0.543 75.7 8.0 0.828 28.5 1.171 -96.3 0.118 -65.3 0.532 55.1 8.5 0.849 8.2 1.060 -115.1 0.122 -80.8 0.555 33.4 9.0 0.872 -8.9 0.921 -132.2 0.117 -97.3 0.606 15.9 9.5 0.884 -21.1 0.794 -145.7 0.111 -109.9 0.623 4.5 10.0 0.891 -31.7 0.734 -153.5 0.115 -118.2 0.679 0.5 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised May 2006