FDMS8660S N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mΩ Features tm General Description The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Application RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S D D D S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25°C -Continuous (Silicon limited) ID TA = 25°C PD TJ, TSTG ±20 V 147 (Note 1a) -Pulsed 25 A 200 Single Pulse Avalanche Energy EAS Units V 40 TC = 25°C -Continuous Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 937 83 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 1.5 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8660S Device FDMS8660S ©2008 Fairchild Semiconductor Corporation FDMS8660S Rev C3 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM June 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 2 V 21 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10mA, referenced to 25°C -4 VGS = 10V, ID = 25A 1.9 2.4 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 21A 2.6 3.5 VGS = 10V, ID = 25A ,TJ = 125°C 2.9 3.9 VDS = 10V, ID = 25A 123 S 4345 pF 1215 pF gFS Forward Transconductance 1 1.5 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz 425 f = 1MHz pF 1.0 1.75 Ω 17 31 ns 12 22 ns 76 122 ns 50 80 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V 81 113 nC Qg(4.5V) Total Gate Charge at 4.5V 62 nC Gate to Source Gate Charge VGS = 0V to 4.5V VDS = 15V ID = 25A 44 Qgs Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 1A VGS = 10V, RGEN = 6Ω 11 nC 16 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) IF = 25A, di/dt = 300A/µs 0.37 0.70 V 35 ns 98 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 25A, VDD = 30V, VGS = 10V. FDMS8660S Rev C3 2 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 ID, DRAIN CURRENT (A) 100 VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX VGS = 6.0V 80 VGS = 4.5V 60 VGS = 3.5V VGS = 3.0V 40 20 0 0.0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 2.0 1.0 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 1.0 0.5 0 20 40 60 80 ID, DRAIN CURRENT(A) 100 120 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX ID = 25A 7 6 5 4 TJ = 125oC 3 2 1 2 TJ = 25oC 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 10 IS, REVERSE DRAIN CURRENT (A) 90 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 80 ID, DRAIN CURRENT (A) VGS = 4.5V 8 ID = 25A VGS = 10V -25 VGS = 6V VGS = 10V 1.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.2 0.6 -50 VGS = 3.5V 2.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 3.0 Figure 1. On-Region Characteristics 1.6 VGS = 3.0V 3.5 70 TJ = 125oC 60 50 40 TJ = 25oC 30 20 TJ = -55oC 10 0 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. Transfer Characteristics FDMS8660S Rev C3 VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 4 VGS, GATE TO SOURCE VOLTAGE(V) 10 10 ID = 25A Ciss 8 CAPACITANCE (pF) VDS = 10V VDS = 15V 6 VDS = 20V 4 2 0 Coss 3 10 Crss f = 1MHz VGS = 0V 2 0 10 20 30 40 50 60 Qg, GATE CHARGE(nC) 70 80 10 0.1 90 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 100oC 10 TJ = 25oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 100ms 1s SINGLE PULSE TJ = MAX RATED 10s TA = 25OC DC 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS8660S Rev C3 30 Limited by Package o RθJC = 1.5 C/W 50 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) 10 1 VGS = 4.5V 40 TC, CASE TEMPERATURE ( C) 1ms 0.1 50 o 100 0.01 0.01 VGS = 10V 60 10 25 3000 1000 0.1 70 20 Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 60 1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 3000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 – T A ----------------------125 I = I25 TA = 25oC 10 1 0.1 -3 10 SINGLE PULSE -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 1E-4 -3 10 t2 SINGLE PULSE -2 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8660S Rev C3 5 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8660S. 0.1 TJ = 125oC CURRENT : 0.8A/DIV 0.01 TJ = 100oC 1E-3 1E-4 1E-5 TJ = 25oC 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIM E : 12.5 nS/Div Figure 15. SyncFET body diode reverses Figure 14. FDMS8660S SyncFET body diode reverse recovery characteristic FDMS8660S Rev C3 leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS8660S N-Channel PowerTrench® SyncFETTM www.fairchildsemi.com 7 FDMS8660S Rev C3 FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® ® tm The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FDMS8660S Rev C3 8 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.