FAIRCHILD FDPF12N50UT

FDPF12N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 10 A, 800 m
Features
Description
• RDS(on) = 650 m (Typ.) @ VGS = 10 V, ID = 5 A
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
- Continuous (TC = 25oC)
Unit
V
±30
V
10*
- Continuous (TC = 100oC)
- Pulsed
FDPF12N50UT
500
6*
A
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.5
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
40*
A
(Note 2)
456
mJ
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
- Derate above 25oC
42
W
0.3
W/oC
-55 to +150
o
C
300
oC
FDPF12N50UT
Unit
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
3.0
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
1
oC/W
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
March 2013
Device Marking
FDPF12N50UT
Device
FDPF12N50UT
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250A, VGS = 0V, TJ = 25oC
500
-
-
V
ID = 250A, Referenced to 25oC
-
0.7
-
V/oC
VDS = 500V, VGS = 0V
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
-
-
25
VDS = 400V, TC = 125oC
-
-
250
VGS = ±30V, VDS = 0V
-
-
±100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5A
-
0.65
0.8

gFS
Forward Transconductance
VDS = 40V, ID = 5A
-
11
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
1050
1395
pF
-
140
190
pF
-
11
17
pF
-
21
30
nC
-
6
-
nC
-
9
-
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 10A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 10A
RG = 25
(Note 4)
-
35
80
ns
-
45
100
ns
-
60
130
ns
-
35
80
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
40
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.6
V
trr
Reverse Recovery Time
-
65
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/s
-
0.1
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 9mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 10A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
2
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
30
ID,Drain Current[A]
ID,Drain Current[A]
30
10
o
150 C
o
25 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
1
2. TC = 25 C
1
10
VDS,Drain-Source Voltage[V]
1
4.0
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7.0
100
1.2
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
5.0
5.5
6.0
6.5
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.4
1.0
VGS = 10V
VGS = 20V
0.8
0.6
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
0
5
10
15
ID, Drain Current [A]
20
1
0.0
25
Figure 5. Capacitance Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
1000
Coss
500
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
2. 250s Pulse Test
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
2.5
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
2000
Capacitances [pF]
4.5
6
4
2
0
30
3
VDS = 100V
VDS = 250V
VDS = 400V
8
*Note: ID = 10A
0
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF12N50UT
80
1.1
1.0
20s
100s
10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
0.9
o
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1. TC = 25 C
o
0.01
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
800
Figure 9. Maximum Drain Current
vs. Case Temperature - FDPF12N50UT
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF12N50UT
Thermal Response [ZJC]
5
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
t1
0.01
0.01
Single pulse
1E-3
-5
10
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
t2
*Notes:
o
1. ZJC(t) = 3.0 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
2
10
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Typical Performance Characteristics (Continued)
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
5
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
6
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
Package Dimensions
TO-220M03
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
FDPF12N50UT Rev.C1
8
www.fairchildsemi.com
FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET
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