FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13mΩ General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. High performance trench technology for extremely low RDS(ON) High power and current handling capability DD2 DD2 D1 D S1 1 DD1 Q1 G1 2 Pin 1 SO-8 G1 S1 S Q2 G2 4 S 6 D2 5 D2 S Absolute Maximum Ratings Symbol 7 D1 S2 3 G2 S2 G SO-8 8 D1 o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ± 20 V ID Drain Current (Note 1a) 7.5 A PD Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 – Continuous – Pulsed 20 (Note 1c) TJ, TSTG W 0.9 –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6911 FDS6911 13’’ 12mm 2500 units ©2011 Fairchild Semiconductor Corporation FDS6911 Rev C1 www.fairchildsemi.com FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET December 2011 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Source Leakage On Characteristics ID = 250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C 20 V 28 mV/°C 1 10 μA ±100 nA 1.8 –4.7 3 V mV/°C 10.6 13 14.5 13 17 20 mΩ VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55°C VGS = ±20 V, VDS = 0 V (Note 2) ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C 1 VGS(th) ΔVGS(th) ΔTJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 7.5 A,TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 36 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1130 pF 300 pF 100 pF 2.4 Ω 20 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time 7 Qg(TOT) Total Gate Charge at Vgs=10V 17 24 nC Qg Total Gate Charge at Vgs=5V 9 13 nC Qgs Gate–Source Charge 3.1 nC Qgd Gate–Drain Charge 2.7 nC FDS6911 Rev C1 VDD = 15 V, VGS = 10 V, VDD = 15 V, ID = 1 A, RGEN = 6 Ω ID = 7.5 A, 9 18 ns 5 10 ns 26 42 ns 14 ns www.fairchildsemi.com FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A IF = 7.5 A, diF/dt = 100 A/µs (Note 2) 1.3 A 1.2 V 24 nS 13 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a .02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% FDS6911 Rev C1 www.fairchildsemi.com FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET Electrical Characteristics 20 2.6 VGS = 10.0V rDS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 16 4.0V 4.5V 3.0V 12 8 4 VGS = 3.0V 2.2 1.8 3.5V 1.4 4.5V 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.25 1.5 0 Figure 1. On-Region Characteristics. 6.0V 10.0V 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.04 ID = 7.5A VGS = 10V ID = 3.8A rDS(on), ON-RESISTANCE (OHM) rDS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0 1 0.6 0 1.4 1.2 1 0.8 0.6 -50 0.03 o TA = 125 C 0.02 0.01 o TA = 25 C 0 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) 4.0 12 o TA = 125 C o 25 C 8 o -55 C 4 10 o TA = 125 C 1 0.1 25oC 0.01 o -55 C 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDS6911 Rev C1 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET Typical Characteristics 1400 f = 1MHz VGS = 0 V ID = 7.5A 1200 8 Ciss VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1000 800 600 Coss 400 2 200 Crss 0 0 0 4 8 12 Qg, GATE CHARGE (nC) 16 0 20 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 100μs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 5 10 1ms 10ms 100ms 1s 1 10s DC 0.1 VGS = 10V SINGLE PULSE o RθJA = 135 C/W o SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 135°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6911 Rev C1 www.fairchildsemi.com FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FPS™ The Power Franchise® ® AccuPower™ F-PFS™ ® PowerTrench® Auto-SPM™ FRFET® Global Power ResourceSM PowerXS™ AX-CAP™* TinyBoost™ GreenBridge™ Programmable Active Droop™ BitSiC® TinyBuck™ Build it Now™ Green FPS™ QFET® TinyCalc™ CorePLUS™ QS™ Green FPS™ e-Series™ TinyLogic® CorePOWER™ Quiet Series™ Gmax™ TINYOPTO™ CROSSVOLT™ RapidConfigure™ GTO™ TinyPower™ CTL™ IntelliMAX™ ™ TinyPWM™ Current Transfer Logic™ ISOPLANAR™ TinyWire™ DEUXPEED® Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® Dual Cool™ SignalWise™ and Better™ TriFault Detect™ EcoSPARK® SmartMax™ MegaBuck™ TRUECURRENT®* EfficentMax™ SMART START™ MICROCOUPLER™ μSerDes™ ESBC™ Solutions for Your Success™ MicroFET™ ® SPM MicroPak™ ® STEALTH™ MicroPak2™ UHC® SuperFET® MillerDrive™ Fairchild® Ultra FRFET™ ® SuperSOT™-3 MotionMax™ Fairchild Semiconductor UniFET™ SuperSOT™-6 Motion-SPM™ FACT Quiet Series™ VCX™ SuperSOT™-8 mWSaver™ FACT® VisualMax™ SupreMOS® OptoHiT™ FAST® VoltagePlus™ SyncFET™ OPTOLOGIC® FastvCore™ XS™ OPTOPLANAR® Sync-Lock™ FETBench™ ®* FlashWriter® *