FDS7766S 30V N-Channel PowerTrench MOSFET General Description Features The FDS7766S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7766S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • 17 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Fast switching • Synchronous rectifier • DC/DC converter D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±16 V ID Drain Current 17 A – Continuous (Note 1a) – Pulsed 60 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.0 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7766S FDS7766S 13’’ 12mm 2500 units 2003 Fairchild Semiconductor Corporation FDS7766S Rev C (W) FDS7766S June 2003 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS = 0 V, ID = 1 mA 30 ID = 15 mA, Referenced to 25°C V 23 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25°C ID(on) On–State Drain Current VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, gFS Forward Transconductance VDS = 10 V, ID = 17 A 91 S VDS = 15 V, V GS = 0 V, f = 1.0 MHz 4785 pF ID = 17 A ID = 15.5 A ID = 17 A, TJ = 125°C VDS = 5 V 1 1.3 –2 4.0 4.6 5.7 mV/°C 5.5 6.5 7.2 30 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics 825 pF 290 pF VGS = 15 mV, f = 1.0 MHz 1.3 Ω VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 22 ns 12 22 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 82 132 ns tf Turn–Off Fall Time 30 49 ns Qg Total Gate Charge 41 58 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 17 A, VGS = 5 V 11 nC 9 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 3.5 A Voltage Schottky Diode Reverse Recovery IF = 17 A, diF/dt = 300 A/µs 3.5 A 0.7 V (Note 2) 0.4 27 ns (Note 2) 28 nC 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7766S Rev C (W) FDS7766S Electrical Characteristics FDS7766S Typical Characteristics 60 2 3.0V ID, DRAIN CURRENT (A) 50 4.5V 6.0V 40 30 20 10 2.0V 0 1.8 1.6 3.0V 1.4 3.5V 1.2 4.5V 6.0V 10V 1 0.8 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 0 Figure 1. On-Region Characteristics. 10 50 60 0.02 ID = 17A VGS =10V RDS(ON), ON-RESISTANCE (OHM) ID = 8.5A 1.4 1.2 1 0.8 0.6 0.016 0.012 TA = 125oC 0.008 TA = 25oC 0.004 0 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 1 Figure 3. On-Resistance Variation withTemperature. 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 20 30 40 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 40 30 TA = 125oC 25oC 20 o -55 C 10 0 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.7 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7766S Rev C (W) 6000 f = 1MHz VGS = 0 V ID = 17A 5000 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 Ciss 4000 3000 2000 Coss 1000 0 0 0 20 40 Qg, GATE CHARGE (nC) 60 0 80 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) 100us RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) Crss 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS7766S Rev C (W) FDS7766S Typical Characteristics FDS7766S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.8A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7766S. 0.1 TA = 125oC 0.01 TA = 100oC 0.001 0.0001 TA = 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature 12.5 nS/div 0.08A/ Figure 12. FDS7766S SyncFET body diode reverse recovery characteristic. 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7766). 12.5 nS/div Figure 13. Non-SyncFET (FDS7766) body diode reverse recovery characteristic. FDS7766S Rev C (W) 30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrench MicroFET™ QFET MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHER OPTOLOGIC SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3