FAIRCHILD FFB20UP20DN_10

FFB20UP20DN_F085
10A, 200V Ultrafast Dual Rectifiers
tm
Features
Description
„ High Reverse Voltage : VRRM = 200V
The FFB20UP20DN_F085 is an ultrafast rectifier. It has
a low forward voltage drop and is a silicon nitride passivated
ion-implanted epitaxial planar construction.
„ Avalanche Energy Rated
„ Planar Construction
This device is intended for use as a freewheeling/clamping
rectifier in a variety of switching power supplies and other
power switching applications. Its low stored charge and
hyperfast recovery minimize ringing and electrical noise in
many power switching circuits, thus reducing power loss in
the switching transistors.
Applications
„ Output Rectifiers
„ Switching Mode Power Supply
„ Free-wheeling diode for motor application
„ Power switching circuits
„ Qualified to AEC Q101
„ RoHS Compliant
Pin Assignments
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
200
V
VRWM
Working Peak Reverse Voltage
200
V
VR
DC Blocking Voltage
200
V
If(avg)
Average Rectified Forward Current
10
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
100
A
TJ, TSTG
Operating Junction and Storage Temperature
-55 to +175
°C
@ TC = 155oC
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC1
Parameter
Maximum Thermal Resistance, Junction to Case
Max
Units
3.5
°C/W
Package Marking and Ordering Information
Device Marking
F20UP20DN
Device
FFB20UP20DN_F085
©2010 Fairchild Semiconductor Corporation
FFB20UP20DN_F085 Rev. A
Package
TO-263
1
Reel Size
13”
Tape Width
24mm
Quantity
800
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FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
February 2010
Symbol
VF
2
Parameter
ο
Min.
Typ.
Max
Units
IF = 10A
IF = 10A
TC = 25 C
TC = 150οC
-
-
1.15
1.0
V
V
IR 2
VR = 200V
VR = 200V
TC = 25οC
TC = 150οC
-
-
10
250
µA
µA
trr
IF =1A, di/dt = 200A/µs, VCC = 130V
IF =10A, di/dt = 200A/µs, VCC = 130V
TC = 25 οC
TC = 25οC
-
15
27
25
40
ns
ns
ta
tb
Qrr
IF =10A, di/dt = 200A/µs, VCC = 130V
TC = 25οC
TC = 25οC
TC = 25οC
-
21
6
50
-
ns
ns
nC
WAVL
Avalanche Energy (L = 20mH)
10
-
-
mJ
Notes
1: Rth_jc value is specified for each die
2: Pulse: Test Pulse width = 300S, Duty Cycle = 2%
2
FFB20UP20DN_F085 Rev. A
2
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Electrical Characteristics TC = 25°C unless otherwise noted
www.fairchildsemi.com
100
10
Reverse Current, IR [µA]
Forward Current, IF [A]
20
o
TC = 175 C
o
TC = 100 C
1
o
TC = 25 C
10
o
TC = 175 C
1
0.1
o
TC = 100 C
0.01
o
TC = 25 C
0.1
0.2
0.4
0.6
0.8
Forward Voltage, VF [V]
1.0
1E-3
1.2
Figure 1. Typical Forward Voltage Drop
Reverse Recovery Time, trr [ns]
Capacitance, cj [pF]
100
TC = 175 C
o
TC = 150 C
4
o
TC = 25 C
2
150
200
di/dt [µ/s]
250
300
30
o
TC = 150 C
25
o
TC = 25 C
100
150
200
di/dt [A/µs]
250
300
12
10
DC
8
6
4
2
0
120
130
140
150
160
Case Temperature, TC (oC)
170
Figure 6. Case Temperature, Tc [oC]
Figure 5. Typical Reverse Recovery Current
FFB20UP20DN_F085 Rev. A
35
Average Recitified Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]
o
6
100
o
TC = 175 C
40
Figure 4. Typical Reverse Recovery Time
8
0
50
IF = 10A
45
20
50
100
Figure 3. Typical Junction Capacitance
IF = 10A
200
50
f = 1MHz
1
10
Reverse Voltage , VR [V]
50
100
150
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
400
10
0.1
0
3
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FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics TC = 25°C unless otherwise noted
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
Figure 9. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 10. Forward Bias Safe Operating Area
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics TC = 25°C unless otherwise noted
Figure 11. Single Pulse Maximum Power Dissipation
Figure 12. Transient Thermal Response Curve
FFB20UP20DN_F085 Rev. A
4
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tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
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2.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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make changes at any time without notice to improve the design.
Obsolete
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FFB20UP20DN_F085 Rev. A
5
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