Ordering number:EN5263 FP502 N-Channel Silicon MOSFET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. unit:mm 2132 1:Source, Anode 2:Common (Drain, Cathode) 3:Source, Anode 4Common (Drain, Cathode) 5:Gate 6:Common (Drain, Cathode) 7:Common (Drain, Cathode) [FP502] SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Allowable Power Dissipation Storage Temperature PD PD Conditions Ratings Unit Tc=25˚C, 1 unit 3.5 Mounted on ceramic board (250mm2×0.8mm) 1 unit 1.5 W –55 to +150 ˚C Tstg W [MOS block] Drain-to-Source Voltage Gate-to-Source Voltage VDSS VGSS Drain Current (DC) 11 V ±10 V 2 A ID Drain Current (Pulse) IDP Channel Temperature PW≤10µs, duty cycle ≤1% 8 A Tch 150 ˚C IO 500 mA [Diode block] Average Rectified Current Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit [MOS block] D-S Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0 VDS=10.4V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA Forward Transfer Admittance IGSS VGS(off) | Yfs | Static Drain-to-Source ON-State Resistance RDS(on) Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 11 V 400 µA ±10 µA 4.0 V 140 200 mΩ ID=500mA, VGS=4V VDS=10V, f=1MHz 200 320 mΩ 150 pF VDS=10V, f=1NHZ VDS=10V, f=1MHz 200 pF 45 pF VDS=10V, ID=1A ID=1A, VGS=10V 1.0 1.2 2.2 S Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4 FP502 Continued from preceding page. Parameter Symbol Conditons Ratings min typ max Unit [MOS block] Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time td(on) See specified Test Circuit. 10 ns tr See specified Test Circuit. 25 ns td(off) See specified Test Circuit. 25 ns tf See specified Test Circuit. 20 ns [Diode block] Forward Voltage VF IF=500mA 0.4 0.45 V Reverse Recovery Time trr IF=500mA, di/dt=50A/µs 20 30 ns Switching Time Test Circuit Electrical Connection 1:Source, Anode 2:Common (Drain, Cathode) 3:Source, Anode 4Common (Drain, Cathode) 5:Gate 6:Common (Drain, Cathode) 7:Common (Drain, Cathode) (Top view) No.5263-2/4 FP502 No.5263-3/4 FP502 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5263-4/4