n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Equivalent Circuit n Maximum Ratings and Characteristics • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Turn-on Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Units V V A W W °C °C ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Switching Time Ratings 600 ± 20 13 5 52 50 25 +150 -40 ∼ +125 Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=5mA VGE=15V IC=5A VGE=0V VCE=10V f=1MHz VCC=300V IC=5A VGE=±15V RG=330Ω VCC=300V IC=5A VGE=+15V RG=33Ω IF=5A VGE=0V IF=5A, VGE=-10V, di/dt=100A/µs Min. Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. 5.5 Max. 1.0 20 8.5 3.0 400 85 15 Units mA µA V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 µs µs 0.35 3.0 300 V ns • Thermal Characteristics Items Thermal Resistance Typ. Max. 2.50 5.00 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 12 V GE = 2 0 V , 1 5 V V GE= 2 0 V , 1 5 V 10 T j= 1 2 5 ° C 12 10 [A] 12V C 8 Collector Current : I Collector Current : I C [A] 12V 6 10V 4 2 8 6 10V 4 2 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 5 6 [V] 10 10 CE [V] 4 T j= 1 2 5 ° C 12 CE 8 Collector-Emitter Voltage : V Collector-Emitter Voltage : V 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] 6 4 IC = 10A 5A 2 2.5A 0 8 6 4 IC = 10A 5A 2 2.5A 0 0 5 10 15 20 25 0 5 Gate-Emitter Voltage : V GE [V] 10 15 20 25 Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 3 0 0 V , R G= 3 3 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G = 3 3 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C 1000 1000 , t r, t off , t f [nsec] t off tf on 100 tf t on 100 Switching Time : t t on Switching Time : t on , t r, t off , t f [nsec] t off tr tr 10 10 0 2 4 6 Collector Current : I C [A] 8 10 0 2 4 6 Collector Current : I C [A] 8 10 Switching Time vs. R G V CC =300V, I C = 5 A , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] 1000 tf on tf 100 tr t on 100 10 tr 10 0 50 100 150 200 250 300 350 0 50 G a t e R e s i s t a n c e : R G [Ω ] 100 150 200 Capacitance vs. Collector-Emitter Voltage 300 350 Dynamic Input Characteristics T j= 2 5 ° C T j= 2 5 ° C 1000 500 25 C ies [V] , C res , C ies [pF] 250 G a t e R e s i s t a n c e : R G [Ω ] V C C =200V, 300V, 400V 20 GE CE 400 Collector-Emitter Voltage : V 100 Capacitance : C oes C oes 10 C res 300 15 200 10 100 5 1 0 0 5 10 15 20 25 30 35 0 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c 10 15 Gate Charge : V R= 2 0 0 V , 5 QG 20 [nQ] [A] 50 0 30 25 -di / dt = 1 0 0 A / µ s e c 4 125°C rr Reverse Recovery Current : I rr 125°C 100 Reverse Recovery Time : t 5 Reverse Recovery Current vs. Forward Current [nsec] 150 -di 25°C 0 3 25°C 2 1 0 0 2 4 6 Forward Current : I F [A] 8 10 [V] Switching Time : t on t on t off Switching Time : t t off 1000 0 2 4 6 Forward Current : I F [A] 8 10 Gate-Emitter Voltage : V , t r, t off , t f [nsec] Switching Time vs. R G V CC =300V, I C = 5 A , V GE = ± 1 5 V , T j= 2 5 ° C Reverse Biased Safe Operating Area Typical Short Circuit Capability + V GE = 1 5 V , - V GE <1 5 V , T j<1 2 5 ° C , R G >33 Ω V CC = 4 0 0 V , R G = 33 Ω , T j= 1 2 5 ° C 80 80 10 [A] 60 40 40 20 20 SC Short Circuit Current : I 4 2 0 0 0 100 200 300 400 500 600 700 5 10 15 Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 20 [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current / dt I F = 5 A , T j= 1 2 5 ° C 12 200 8 I rr T j= 1 2 5 ° C 2 5 °C 150 6 100 4 50 2 Forward Current : I 6 4 2 0 0,0 t rr 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 -di Forward Voltage : V F [V] / dt 300 400 0 500 [A/µsec] Thermal Resistance : Rth(j-c) [°C/W] Transient Thermal Resistance 10 10 10 10 1 FWD 0 IGBT -1 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com Reverse Recovery Current : I rr Reverse Recovery Time : t 8 F [A] rr [nsec] 10 -di [A] Collector Current : I 6 Short Circuit Time : t SC 8 C [A] I SC t SC 60 [µs] 12