HAF2008 Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-707 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220FM 2 D 1 Gate resistor G Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 2 3 S 3 1. Gate 2. Drain 3. Source HAF2008 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS (16) V Gate to source voltage VGSS (–2.5) V Drain current ID 20 A 40 A 20 A 30 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Typical Operation Characteristics Item Symbol Min Typ Max Unit Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current I IH1 — — 100 µA Vi = 8V, VDS = 0 (Gate non shut down) I IH2 — — 50 µA Vi = 3.5V, VDS = 0 I IL — — 1 µA Vi = 1.2V, VDS = 0 Input current I IH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0 (Gate non shut down) I IH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage Vop 3.5 — 12 V 2 Test Conditions HAF2008 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current I D1 (25) — — A VGS = 3.5V, VDS = 2V Drain current I D2 — — 10 mA VGS = 1.2V, VDS = 2V Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS (16) — — V I G = (300µA), VDS = 0 Gate to source breakdown voltage V(BR)GSS (–2.5) — — V I G = (–100µA), VDS = 0 Gate to source leak current I GSS1 — — 100 µA VGS = 8V, VDS = 0 I GSS2 — — 50 µA VGS = 3.5V, VDS = 0 I GSS3 — — 1 µA VGS = 1.2V, VDS = 0 I GSS4 — — –100 µA VGS = –2.4V, VDS = 0 I GS(op)1 — 0.8 — mA VGS = 8V, VDS = 0 I GS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0 Zero gate voltege drain current I DSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) — 45 60 mΩ I D = 10A, VGS = 4V Note3 Static drain to source on state resistance RDS(on) — 28 40 mΩ I D = 10A, VGS = 10V Note3 Forward transfer admittance |yfs| (11) (17) — S I D = 10A, VDS = 10V Note3 Output capacitance Coss — (380) — pF VDS = 10V , VGS = 0 f = 1 MHz Turn-on delay time t d(on) — ( ) — µs I D = 10A, VGS = 5V Rise time tr — ( ) — µs RL = 3Ω Turn-off delay time t d(off) — ( ) — µs Fall time tf — ( ) — µs Body–drain diode forward voltage VDF — (1.0) — V I F = 20A, VGS = 0 Body–drain diode reverse recovery time t rr — ( ) — ns I F = 20A, VGS = 0 diF/ dt =50A/µs Over load shut down t os1 — ( ) — ms VGS = 5V, VDD = 12V t os2 — ( ) — ms VGS = 5V, VDD = 24V Input current (shut down) operation time Note: Note4 3. Pulse test 4. Include the time shift based on increasing of chennel temperature when operete under over load condition. 3 HAF2008 Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (W) 40 30 20 10 0 50 100 Case Temperature 4 150 Tc (°C) 200 HAF2008 Package Dimensions Unit: mm 2.8 ± 0.2 2.5 ± 0.2 10.0 ± 0.3 7.0 ± 0.3 2.54 ± 0.5 2.54 ± 0.5 2.7 14.0 ± 1.0 0.7 ± 0.1 4.45 ± 0.3 2.0 ± 0.3 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 17.0 ± 0.3 12.0 ± 0.3 0.6 φ 3.2 ± 0.2 0.5 ± 0.1 Hitachi Code TO–220FM SC–72 EIAJ Code — JEDEC Code 5 HAF2008 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6