RENESAS HAT1126R

HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0406-0100
Rev.1.00
Sep.10.2004
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
7 8
D D
5 6
D D
2
G
8
4
G
5
7 6
3
1 2
S1
4
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S3
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
Ratings
HAT1126R
HAT1126RJ
–60
±20
–6.0
–48
–60
±20
–6.0
–48
Avalanche current
IAPNote4
—
–6.0
Note4
Avalanche energy
EAR
—
3.08
Channel dissipation
PchNote2
2
2
Channel dissipation
PchNote3
3
3
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00 Sep. 10, 2004 page 1 of 7
Unit
V
V
A
A
A
mJ
W
W
°C
°C
HAT1126R, HAT1126RJ
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Symbol
V(BR)DSS
Min
–60
Typ
—
Max
—
Unit
V
Unit
ID = –10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS
Zero gate voltage drain current
IDSS
HAT1126R
IDSS
Zero gate voltage
drain current
HAT1126RJ
IDSS
Gate to source leak current
IGSS
Gate to source cutoff voltage
VGS(off)
Forward transfer admittance
|yfs|
Static drain to source on state
RDS(on)
resistance
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
±20
—
—
—
—
–1.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
40
60
2300
230
140
37
6.5
8
—
–1
—
–10
±10
–2.5
—
50
85
—
—
—
—
—
—
V
µA
µA
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0
Ta = 125°C
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
20
15
55
10
–0.85
—
—
—
—
–1.1
ns
ns
ns
ns
V
VGS = –10 V, ID= –3.0 A
VDD ≅ –30 V
RL = 10 Ω
RG = 4.7 Ω
trr
—
30
—
ns
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 5. Pulse test
Rev.1.00 Sep. 10, 2004, page 2 of 7
VGS = ±16 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –3.0 ANote5, VDS = –10 V
ID = –3.0 ANote5, VGS = –10 V
ID = –3.0 ANote5, VGS = –4.5 V
VDS = –10 V, VGS = 0
f = 1 MHz
VDD = –25 V
VGS = –10 V
ID = –6.0 A
IF = –6.0 A, VGS = 0Note5
IF = –6.0 A, VGS = 0
diF/dt = 100 A / µs
HAT1126R, HAT1126RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
10 µs
–100
10
0
(A)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
–10
ID
C
ive
Op
er
50
ion
at
er
Op
Dr
1.0
0
ive
1
pe
–1
ion
Ambient Temperature
150
–0.01
–0.01
200
–0.1
–1
–10
–100
(A)
–3 V
Drain Current
–4
–2
ID = –5 A
–200
–3 A
–100
–1 A
0
–10
Gate to Source Voltage
Rev.1.00 Sep. 10, 2004, page 3 of 7
–15
VGS
–20
(V)
Drain to Source On State Resistance
–400
RDS(on) (mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–300
–6
–4
0
–4
–5
VDS (V)
Pulse Test
–8
–2
VGS = –2.5 V
–1
–2
–3
Drain to Source Voltage
VDS = –10 V
Pulse Test
ID
(A)
ID
Drain Current
< No
10 te6
s)
Typical Transfer Characteristics
Pulse Test
–6
Drain to Source Saturation Voltage
VDS(on) (mV)
s
–10
–10 V
–4 V
–5
m
(P
Drain to Source Voltage VDS (V)
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Ta (°C)
–8
0
10
W
Operation in
this area is
limited by R DS(on)
µs
Ta = 25°C
1 shot Pulse
Typical Output Characteristics
–10
=
tio
n
–0.1
at
100
O
ra
Drain Current
Dr
Channel Dissipation
2
2.0
PW
D
s
m
3.0
1
Pch (W)
4.0
25°C
Tc = 75°C
−25°C
–1
–2
–3
Gate to Source Voltage
–4
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
VGS = –4.5 V
50
–10 V
20
10
–1
–3
–10
Drain Current
–30
ID
(A)
–100
Static Drain to Source on State Resistance
vs. Temperature
160
Pulse Test
120
–5 A
–1 A
80
ID = –1, –3, –5 A
–10 V
0
–50
–25
0
25
50
75
Case Temperature
100 125
Tc
Tc = –25°C
10
3
25°C
1
0.1
0.01
–0.01 –0.03 –0.1 –0.3
–1
–3
10000
Capacitance C (pF)
10
5
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
2
–0.3
–1
–3
Reverse Drain Current
IDR
Typical Capacitance vs.
Drain to Source Voltage
300
Coss
100
Crss
30 V = 0
GS
f = 1 MHz
10
0
–10
–10
(A)
–12
–80
ID = –6 A
16
VGS –16
VDD = –50V
–25V
–10V
32
Gate Charge
Rev.1.00 Sep. 10, 2004, page 4 of 7
48
64
Qg (nc)
–20
160
VGS (V)
Switching Time t (ns)
–8
VDS
–40
–50
(V)
Switching Characteristics
–4
–40
–30
1000
Gate to Source Voltage
(V)
–20
–20
Drain to Source Voltage VDS
0
VDD = –50 V
–25 V
–10 V
Ciss
1000
Dynamic Input Characteristics
0
–10
Drain Current ID (A)
3000
1
–0.1
Drain to Source Voltage VDS
VDS = –10 V
Pulse Test
0.03
(°C)
20
–100
0
75°C
0.3
50
–60
Forward Transfer Admittance vs.
Drain Current
30
150
Body-Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
–3 A
VGS = –4.5 V
40
100
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT1126R, HAT1126RJ
300
100
30
td(off)
tf
tr
td(on)
10
3
1
–0.1
VGS = –10 V, VDD = –30 V
PW = 5 µs, RG = 4.7 Ω, duty ≤ 1 %
–0.3
–1
Drain Current
ID
–3
(A)
–10
HAT1126R, HAT1126RJ
Reverse Drain Current IDR (A)
–10
–10 V
Normalized Transient Thermal Impedance γs (t)
1
Pulse Test
–8
–6
–5 V
–4
VGS = 0, 5 V
–2
0
10
Reverse Drain Current vs.
Source to Drain Voltage
–0.4 –0.8 –1.2
Source to Drain Voltage
–1.6
–2.0
VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θch – f(t) = γs (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
0.02
0.01
lse
0.001
PDM
u
tp
D=
ho
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
10
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θch – f(t) = γs (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.02
0.01
0.001
1s
ho
t
ls
pu
PDM
e
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.1.00 Sep. 10, 2004, page 5 of 7
10
100
1000
10000
HAT1126R, HAT1126RJ
Avalanche Test Circuit
Avalanche Waveform
V DS
Monitor
1
2
EAR =
L
VDSS
2
L • I AP •
VDSS - V DD
I AP
Monitor
Rg
V (BR)DSS
I AP
VDD
D. U. T
V DS
ID
Vin
-15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
Rg
10%
D.U.T.
90%
RL
90%
90%
Vin
-10 V
V DD
= -10 V
Vout
td(on)
Rev.1.00 Sep. 10, 2004, page 6 of 7
10%
tr
10%
td(off)
tf
HAT1126R, HAT1126RJ
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
1
1.75 Max
*0.22 ± 0.03
0.20 ± 0.03
4
0.75 Max
+ 0.10
6.10 – 0.30
1.08
*0.42 ± 0.08
0.40 ± 0.06
0.14 – 0.04
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Ordering Information
Part Name
HAT1126R-EL-E
HAT1126RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Sep. 10, 2004, page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .2.0