HAT2165N Silicon N Channel Power MOS FET Power Switching REJ03G1680-0300 Rev.3.00 May 27, 2008 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 5 6 7 8 DDDD 2X XX 1(S) 2(S) 3(S) 4(G) 8(D) 7(D) 6(D) 5(D) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit VDSS VGSS 30 ±20 V V ID Note1 ID(pulse) 55 220 A A Body-drain diode reverse drain current Avalanche current IDR IAP Note 2 55 30 A A Avalanche energy Channel dissipation Channel to case thermal resistance EAR Note 2 Pch Note3 θch-C 90 30 4.17 mJ W °C/W Channel temperature Tch 150 Storage temperature Tstg –55 to +150 °C °C Drain to source voltage Gate to source voltage Drain current Drain peak current Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 1 of 6 HAT2165N Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 2 of 6 Min 30 ±20 — — 1.0 — — 60 — — — — — — — — — Typ — — — — — 2.8 3.7 100 5180 1200 380 0.5 33 15 7.1 13 65 Max — — ±10 1 2.5 3.6 5.6 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns — — — — 60 9.5 0.81 40 — — 1.06 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 27.5 A, VGS = 10 V Note4 ID = 27.5 A, VGS = 4.5 V Note4 ID = 27.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 55 A VGS = 10 V, ID = 27.5 A VDD ≅ 10 V RL = 0.36 Ω Rg = 4.7 Ω IF = 55 A, VGS = 0 Note4 IF = 55 A, VGS = 0 diF/ dt = 100 A/ µs HAT2165N Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 Drain Current ID (A) 100 30 20 10 0 100 Drain Current ID (A) 10 µ 0µ s s 10 PW DC 10 Op 1m =1 s 0m era s tio n 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 1 shot Pulse 50 100 150 0.01 0.1 200 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 4.5 V 100 Pulse Test VDS = 10 V Pulse Test 3.0 V 80 2.8 V 60 2.6 V 40 2.4 V 20 Drain Current ID (A) Channel Dissipation Pch (W) 40 80 60 25°C 40 Tc = 75°C -25°C 20 VGS = 2.2 V 2 4 6 8 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 250 Pulse Test 200 150 ID = 50 A 100 20 A 50 10 A 0 4 8 12 16 Gate to Source Voltage VGS (V) REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 3 of 6 20 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 10 Pulse Test 5 VGS = 4.5 V 10 V 2 1 1 3 10 30 100 300 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 8 Pulse Test ID = 10 A, 20 A 6 50 A VGS = 4.5 V 4 10 A, 20 A, 50 A 2 10 V 0 -25 0 25 50 75 100 125 150 1000 300 100 Tc = -25°C 30 75°C 10 25°C 3 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 1 3 10 30 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) 100 50 20 1 3 10 30 1000 Coss 300 Crss 100 VGS = 0 f = 1 MHz 0 5 10 15 20 25 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 ID = 55 A VGS VDD = 5 V 10 V 25 V 30 VDD = 25 V 12 20 8 VDD 10 V 4 10 5V 0 3000 10 100 20 40 60 80 Gate Charge Qg (nc) REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 4 of 6 0 100 1000 Switching Time t (ns) 40 0.3 100 Ciss 30 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2165N 300 td(off) 100 tf 30 td(on) 10 tr 3 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2165N Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 80 10 V VGS = 0 5V 60 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 100 IAP = 30 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Waveform L VDS Monitor EAR = 1 L • IAP2 • 2 VDSS VDSS - VDD IAP Monitor Rg D. U. T V(BR)DSS VDD IAP VDS Vin 15 V 50 Ω ID 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V VDS = 10 V 10% 90% td(on) REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 5 of 6 10% tr 10% 90% td(off) tf HAT2165N Package Dimensions Package Name LFPAK-i JEITA Package Code RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g + 0.05 4.9 0.25 – 0.03 5.3Max 5 + 0.25 4 0.60 – 0.30 1 + 0.05 3.3 0.20 – 0.03 1.3Max 6.1 – 0.3 + 0.1 3.2 3.95 8 + 0.03 0.07 – 0.04 1.1Max 0° – 8° 0.75Max 1.27 0.10 0.4 ± 0.06 0.25 M ( Ni/Pd/Au plating ) Ordering Information Part No. HAT2165N-EL-E Quantity 2500 pcs REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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