ETC HB56A840BR-7B

HB56A840BR Series
8,388,608-word × 40-bit High Density Dynamic RAM Module
ADE-203Rev. 0.0
Dec. 1, 1995
Description
The HB56A840BR is a 8 M × 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM
(HM5116400BS) sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in-line package.
Therefore, the HB56A840BR makes high density mounting possible without surface mount technology. The
HB56A840BR provides common data inputs and outputs. Decoupling capacitors are mounted beneath each
SOJ only on the one side its module board.
Features
•
•
•
•
•
•
•
•
72-pin single in-line package
— Lead pitch : 1.27 mm
Single 5 V (±5%) supply
High speed
— Access time : 60 ns/70 ns/80 ns (max)
Low power dissipation
— Active mode: 4.47 W/3.94 W/3.68 W (max)
— Standby mode: 210 mW (max)
Fast page mode capability
4,096 refresh cycle: 64 ms
3 variations of refresh
— RAS-only refresh
— CAS-before-RAS refresh
— Hidden refresh
TTL compatible
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HB56A840BR Series
Ordering Information
Type No.
Access Time
Package
Contact pad
HB56A840BR-6B
HB56A840BR-7B
HB56A840BR-8B
60 ns
70 ns
80 ns
72-pin SIP socket type
gold
Pin Arrangement
1 pin
36 pin 37 pin
72 pin
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
1
VSS
19
OE
37
DQ19
55
DQ28
2
DQ0
20
DQ8
38
DQ20
56
DQ29
3
DQ1
21
DQ9
39
VSS
57
DQ30
4
DQ2
22
DQ10
40
CAS0
58
DQ31
5
DQ3
23
DQ11
41
A10
59
VCC
6
DQ4
24
DQ12
42
A11
60
DQ32
7
DQ5
25
DQ13
43
CAS1
61
DQ33
8
DQ6
26
DQ14
44
RAS0
62
DQ34
9
DQ7
27
DQ15
45
RAS1
63
DQ35
10
VCC
28
A7
46
DQ21
64
DQ36
11
PD4
29
DQ16
47
WE
65
DQ37
12
A0
30
VCC
48
×40 (V SS )
66
DQ38
13
A1
31
A8
49
DQ22
67
PD0
14
A2
32
A9
50
DQ23
68
PD1
15
A3
33
NC
51
DQ24
69
PD2
16
A4
34
NC
52
DQ25
70
PD3
17
A5
35
DQ17
53
DQ26
71
DQ39
18
A6
36
DQ18
54
DQ27
72
VSS
2
This Material Copyrighted by Its Respective Manufacturer
HB56A840BR Series
Pin Description
Pin Name
Function
A0–A11
Address input:
Row address:
Column address:
Refresh address
DQ0–DQ39
Data-in/data-out
CAS0, CAS1
Column address strobe
RAS0, RAS1
Row address strobe
WE
Read/write enable
OE
Output enable
VCC
Power supply (+5 V)
VSS
Ground
PD0–PD4
Presence detect pin
NC
No connection
A0–A11
A0–A11
A0–A9
A0–A11
Presence Detect Pin Arrangement
HB56A840BR
Pin No.
Pin Name
60 ns
70 ns
80 ns
67
PD0
NC
NC
NC
68
PD1
VSS
VSS
VSS
69
PD2
NC
VSS
NC
70
PD3
NC
NC
VSS
11
PD4
VSS
VSS
VSS
3
This Material Copyrighted by Its Respective Manufacturer
HB56A840BR Series
Block Diagram
RAS1
CAS1
RAS0
CAS0
DQ0
DQ1
DQ2
DQ3
I/O
I/O
I/O
I/O
CAS RAS
D0
I/O
I/O
I/O
I/O
CAS RAS
D10
DQ4
DQ5
DQ6
DQ7
I/O
I/O
I/O
I/O
CAS RAS
D1
I/O
I/O
I/O
I/O
CAS RAS
D11
DQ8
DQ9
DQ10
DQ11
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ12
DQ13
DQ14
DQ15
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ16
DQ17
DQ18
DQ19
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ20
DQ21
DQ22
DQ23
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ24
DQ25
DQ26
DQ27
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ28
DQ29
DQ30
DQ31
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ32
DQ33
DQ34
DQ35
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
DQ36
DQ37
DQ38
DQ39
I/O
I/O
I/O
I/O
CAS RAS
I/O
I/O
I/O
I/O
CAS RAS
D2
D3
D4
D5
D6
D7
D8
D9
A0 to A11
D0 – D19
WE
D0 – D19
OE
D0 – D19
VCC
VSS
D12
D13
D14
D15
D16
D17
D18
D19
D0 – D19
C0 – C9
D0 – D19
Note: D0 – D19 : HM5116400
4
This Material Copyrighted by Its Respective Manufacturer
HB56A840BR Series
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V SS
VT
–1.0 to +7.0
V
Supply voltage relative to VSS
VCC
–1.0 to +7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
10
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VCC
4.75
5.0
5.25
V
1
Input high voltage
VIH
2.4
—
5.5
V
1
Input low voltage
VIL
–1.0
—
0.8
V
1
Note:
1. All voltage referred to VSS .
5
This Material Copyrighted by Its Respective Manufacturer
HB56A840BR Series
DC Characteristics (Ta = 0 to +70 °C, VCC = 5 V ± 5%, VSS = 0 V)
HB56A840BR
60 ns
70 ns
80 ns
Parameter
Symbol Min
Max Min
Max Min
Max Unit Test Conditions
Notes
Operating current
I CC1
—
850
—
750
—
700
mA
t RC = min
1, 2
Standby current
I CC2
—
40
—
40
—
40
mA
TTL interface,
RAS, CAS = VIH,
Dout = High-Z
—
20
—
20
—
20
mA
CMOS interface,
RAS, CAS ≥VCC –0.2 V
Dout = High-Z
RAS-only refresh
current
I CC3
—
850
—
750
—
700
mA
t RC = min
2
Standby current
I CC5
—
100
—
100
—
100
mA
RAS = VIH, CAS = VIL
Dout = enable
1
CAS-before-RAS
refresh current
I CC6
—
850
—
750
—
700
mA
t RC = min
Page mode current
I CC7
—
750
—
650
—
550
mA
t PC = min
Input leakage current
I LI
–10
10
–10
10
–10
10
µA
0 V ≤ Vin ≤ 7 V
Output leakage current I LO
–10
10
–10
10
–10
10
µA
0 V ≤ Vout ≤ 7 V
Dout = disable
Output high voltage
VOH
2.4
VCC
2.4
VCC
2.4
VCC
V
High Iout = –5 mA
Output low voltage
VOL
0
0.4
0
0.4
0
0.4
V
Low Iout = 4.2 mA
1, 3
Notes: 1. I CC depends on output load condition when the device is selected, ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
Capacitance (Ta = 25°C, VCC = 5 V ± 5%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
CI1
—
140
pF
1
Input capacitance (WE, OE)
CI2
—
160
pF
1
Input capacitance (RAS, CAS)
CI3
—
90
pF
1
I/O capacitance (DQ)
CI/O
—
25
pF
1, 2
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = VIH to disable Dout.
6
This Material Copyrighted by Its Respective Manufacturer
HB56A840BR Series
AC Characteristics
• Refer to the HM5116400B Series data sheet.
Physical Outline
Unit: mm/inch
3.175
0.125
6.35
0.25
1.27
0.05
2.03
0.08
6.35
0.25
R1.57
R0.062
6.35
0.25
44.45
1.75
1.04
0.041
2.54
0.10
10.16
0.40
R1.57
R0.062
44.45
1.75
–0.003
B
Detail A
60 ns
70 ns
80 ns
Detail B
2.54 Min.
0.100
1.07 Max.
0.042
0.25 Max.
0.010
7
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+0.10
1.27 –0.08
0.05 +0.004
7.23 Min
0.285
9.40 Max
0.37
25.4
1.00
2– φ
A
3.17 Min
0.125
107.95
4.25
101.19
3.98