HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W(PEP) • Omnigold™ Metalization System B C E MAXIMUM RATINGS IC 40 A VCBO 110 V VCEO 55 V VEBO 4.0 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.40 °C/W CHARACTERISTICS SYMBOL ORDER CODE: ASI10615 TC = 25° C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 55 V BVCES IC = 200 mA 110 V BVEBO IE = 20 mA 4.0 V ICEO VCE = 30 V 10 mA ICES VCE = 60 V 10 mA hFE VCE = 6.0 V 45 --- Cob VCB = 50 V 360 pF GP IMD3 ηC VCE = 50 V -30 dB dBc % IC = 10 A 15 f = 1.0 MHz 14.5 ICQ = 150 mA POUT = 250 W(PEP) 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2 ERROR! REFERENCE SOURCEHF250-50 NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 2/2