PD - 94603 HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) IRF7YSZ44VCM 60V, N-CHANNEL Product Summary Part Number IRF7YSZ44VCM RDS(on) ID 0.0195Ω 20A* BVDSS 60V Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Low Ohmic TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 20* 20* 80 50 0.4 ±20 71 20 5.0 1.6 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 02/07/03 IRF7YSZ44VCM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage — — V — 0.064 — V/°C — — 0.0195 Ω 2.0 17 — — — — — — 4.0 — 25 250 V S( ) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 50 18 25 20 120 60 90 — Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1730 375 60 — — — ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Typ Max Units 60 Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 20A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 20A ➃ VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 20A VDS = 48V Ω BVDSS µA nA nC VDD = 30V, ID = 20A, VGS = 10V, RG = 9.1Ω ns nH pF Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 20* 80 1.2 105 220 Test Conditions A V ns nC Tj = 25°C, IS = 20A, VGS = 0V ➃ Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 2.5 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7YSZ44VCM 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 4.5V 20µs PULSE WIDTH Tj = 25°C 1 10 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 150°C TJ = 25°C 10 VDS = 25V 20µs 15 PULSE WIDTH 1.0 4.5 5 5.5 6 6.5 7 7.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100.0 Fig 2. Typical Output Characteristics 100 4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain-to-Source Current ( Α) 4.5V 8 I D = 20A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7YSZ44VCM 3000 ID = 20A 2000 VGS, Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 2500 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Ciss 1500 1000 Coss 500 VDS = 48V VDS = 30V VDS= 12V 8 4 Crss 0 0 1 10 100 0 5 VDS, Drain-to-Source Voltage (V) 15 20 25 30 35 40 QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID , Drain-to-Source Current (A) 100 ISD , Reverse Drain Current ( Α) 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 T J = 150°C T J = 25°C 10 VGS = 0V 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1.0 0.4 100µs 10 1.6 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7YSZ44VCM 40 LIMITED BY PACKAGE I D , Drain Current (A) RD V DS VGS D.U.T. RG 30 + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7YSZ44VCM 1 5V D R IV E R L VDS D .U .T. RG + V - DD IA S 2V 0V GS tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS EAS , Single Pulse Avalanche Energy (mJ) 150 ID 9.0A 12.6A BOTTOM 20A TOP 120 90 60 30 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ 12V .2µF .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7YSZ44VCM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 20A, di/dt ≤ 310A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.35mH Peak I AS = 20A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 60V, TJ ≤ 150°C Case Outline and Dimensions — Low-ohmic TO-257AA 0.13 [.005] A 3.81 [.150] 3X Ø 3.56 [.140] 10.66 [.420] 10.42 [.410] 5.08 [.200] 4.83 [.190] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 10.92 [.430] 10.42 [.410] 1 2 1.14 [.045] 0.89 [.035] B 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] C A 3.05 [.120] B NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PE R ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIME TERS [INCHES ]. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA. P IN AS S IGNME NT S 1 = DRAIN 2 = S OURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 www.irf.com 7